Graphene battery is the bubble it Since October 23, 2015, HUAWEI and the United Kingdom, University of Manchester to achieve graphene application research project, we look forward to HUAWEI launched the subversive results, but who are ...
China military (DI:fbi517549070) has been a large number of Chinese on the chip to rely on imports, and the cost of the purchase of the chip has been more than the cost of oil, but also in the United States Intel CPU, AMD, IBM. There are ...
Tags: China, The United States, CPU
The period of rapid development of smart phones is only 7~8 years, the birth of a spread of the world's disease - mobile phone dependency syndrome. Now most people are the head of the party, whether it is work, travel, squat large, ...
Tags: smart phone, car, USB
On November 23, 2016, in a conference focusing on technology and fashion, the DITO light truck with smart configuration and stylish appearance was launched in Rizhao. The DITO light trunks are released officially in the witness of more than ...
Tags: Trucks, light truck
Imec and Ghent University in Belgium have used aspect ratio trapping (ART) techniques to produce indium gallium arsenide (InGaAs) multiple quantum wells (MQWs) on 300mm-diameter silicon in a ridge format that could be used in future laser ...
Tags: InGaAs MQWs, InGaAs Laser diodes, Imec and Ghent University
Researchers in China have developed indium gallium nitride (InGaN) photovoltaic devices that increase in efficiency with temperature up to 423K [Zhaoying Chen et al, Appl. Phys. Lett., vol109, p062104, 2016]. "The positive efficiency ...
Tags: InGaN solar cells InGaN, MOCVD, positive temperature coefficient
Yale University and University of Illinois Urbana in the USA have improved the efficiency of gallium arsenide phosphide (GaAsP) solar cells on silicon (Si) by reducing threading dislocation densities (TDDs) [Kevin Nay Yaung et al, Appl. ...
Tags: GaAsP solar cells, GaAsP, MBE, MOCVD
Researchers in Germany have been developing an epitaxial lift-off (ELO) process that would allow gallium arsenide (GaAs) substrates to be reused for indium gallium aluminium phosphide (InGaAlP) thin-film light-emitting diode (LED) ...
Advantech Wireless Inc of Montreal, Canada (which manufactures satellite, RF equipment and microwave systems) says that in the last fiscal quarter it has delivered several hundred units of its gallium nitride (GaN)-based solid-state power ...
Tags: GaN-based SSPAs, HEMT, Advantech Wireless
University of California Santa Barbara (UCSB) in the USA has developed a monolithic white light-emitting diode (LED) with blue light produced by electrical pumping, and green/'red' by optical pumping from the blue source [S. J. Kowsz et al, ...
First Solar Inc of Tempe, AZ, USA – which makes thin-film photovoltaic modules based on cadmium telluride (CdTe) as well as providing engineering, procurement & construction (EPC) services – says that its New Delhi-based ...
Tags: solar power
Raytheon UK's Integrated Power Solutions (IPS) business unit in Glenrothes, Scotland, has developed a high-temperature, small-form-factor bridge leg power module. Aimed at high-speed switching applications, the module has potential uses in ...
Tags: Raytheon, Electrical Switching
Researchers at Hong Kong University of Science and Technology (HKUST) are proposing using III-nitride and silicon carbide (SiC) hybrid technologies for high-voltage power devices [Jin Wei et al, IEEE Transactions on Electron Devices, vol63, ...
Researchers based in Taiwan and USA have increased the modulation bandwidth of indium gallium nitride (InGaN) light-emitting diodes (LEDs) [Jin-Wei Shi, IEEE Electron Device Letters, published online 26 May 2016]. The enhanced bandwidth was ...
Xidian University in China has used pulsed metal-organic chemical vapor deposition (MOCVD) to increase indium gallium nitride (InGaN) room-temperature channel mobility to 1681cm2/V-s, which is claimed to be a record [Yachao Zhang et al, ...