Researchers in Taiwan have produced indium gallium arsenide (InGaAs) metal-oxide-semiconductor capacitors (MOSCAPs) with low interface trap densities directly on silicon [Yueh-Chin Lin etal, Appl. Phys. Express, vol7, p041202, 2014]. InGaAs ...
Singapore's Nanyang Technological University has developed conventional aluminium gallium nitride (AlGaN) high-electron-mobility transistors (HEMTs) with record-breaking figures-of-merit (FOMs) for frequency and breakdown performance [Kumud ...
Tags: Electrical, Electronics
University of California Santa Barbara (UCSB) and epiwafer foundry IQE Inc have developed 1.3μm-wavelength indium arsenide (InAs) quantum dot (QD) lasers grown on silicon (Si) with “record performance” [Alan Y. Liu et al, ...
Tags: Silicon, `Quantum Dot Lasers
Sapphire substrate concept stocks have soared lately on China’s A-Shares market, but major international sapphire substrate suppliers stock prices have plunged, according to a China Securities Journal article. Out of the major ...
Germany's Azzurro Semiconductors AG has reported uniformity measurements for indium gallium nitride (InGaN) light-emitting diodes on large-diameter silicon substrates up to 200mm [Andrea Pinos, etal, Appl. Phys. Express, vol6, p095502, ...
Tags: InGaN Silicon substrates, LED, Electrical, Electronics
Azzurro has announced both production and lab milestones in wavelength variation using its GaN-on-Si LED template wafers and Air Water is working on a GaN-on-SiC-on-Si architecture with a new Aixtron MOCVD reactor. While the LED industry ...
Tags: LED Substrate Strategies, Lighting
University of Tokyo has improved the temperature performance of 1.3μm quantum dot (QD) laser diodes bonded to silicon [Katsuaki Tanabe et al, Appl. Phys. Express, vol6, p082703, 2013]. Photonic circuits are commonly created in silicon, ...
Tags: Quantum Dot Lasers, Electrical, Electronics
It is reported that Hong Kong University of Science and Technology (HKUST) has developed silicon substrate green and yellow nitride semiconductor LEDs. Details of the development were published in the May 29th issue of IEEE Electronic ...
Tags: HKUST, Lighting, Semiconductor, LED
The UK’s Engineering and Physical Sciences Research Council (EPSRC) has awarded funding totaling more than £823,800m to two universities for the project ‘Novel High Thermal Conductivity Substrates for GaN Electronics: ...
Tags: Electrical, Electronics, GaN Electronics
Mitsubishi Electric Corporation announced this week that it has developed a prototype multi-wire electrical discharge processing technology to cut very hard four inch square polycrystalline silicon carbide (SiC) ingots into 40 pieces at ...
Researchers in Spain have grown high-indium-content indium gallium nitride (InGaN) directly on silicon (Si) substrates [Praveen Kumar et al, Appl. Phys. Express, vol6, p035501, 2013]. The work was carried out at Universidad ...
Tags: InGaN, silicon, Optoelectronics, Microtechnology
Toshiba and US-based Bridgelux will reportedly start volume production of 8-inch Si-substrate GaN wafers for use to make LED chips in the first quarter of 2013, according to Taiwan-based makers. However, president Jacob Tam for TSMC Solid ...
LED utilization rates are picking up again, with utilization in Taiwan now back up to 70 to 90 percent of capacity. Companies expect to be back to close to 100 percent in a month or two, driven by TV backlight demand, reports Yole ...
AIXTRON SE introduced a 5 x 200mm gallium nitride on silicon (GaN-on-Si) reactor design for its G5 Planetary Reactor metal organic chemical vapor deposition (MOCVD) platform. AIX G5+ comprises special reactor hardware and process design, ...
Tags: MOCVD
Hong Kong University of Science and Technology (HKUST) has grown high-performance indium gallium arsenide (InGaAs) metal–oxide–semiconductor high-electron-mobility transistors (MOSHEMTs) directly on silicon [Xiuju Zhou et al, ...