University of Montpellier in France claims the first continuous-wave (cw) operation at room temperature of a 15μm indium arsenide (InAs) quantum cascade laser (QCL) [Alexei N. Baranov et al, Optics Express, vol. 24, p18799, 2016]. "To ...
Tags: University of Montpellier, InAs, MBE
Rensselaer Polytechnic Institute and General Electric Global Research Center in the USA "experimentally demonstrate, for the first time, bi-directional 4H-silicon carbide planar gate, insulated-gate bipolar transistors (IGBTs) fabricated on ...
Tags: Bipolar Transistor
POET Technologies Inc of San Jose, CA, USA — which has developed the proprietary planar optoelectronic technology (POET) platform for monolithic fabrication of integrated III-V-based electronic and optical devices on a single ...
Tags: POET, BB Photonics, integrated photonic
Integrated passive device maker OnChip Devices Inc of Santa Clara, CA, USA says that its wafer fabrication facility is offering backside metallization (BSM) of thin films for applications such as military, medical, and instrumentation. ...
Tags: Sputtering, HB-LEDs, GaN-on-Si, Wafer bonding
Researchers based in China, Singapore and Turkey have used an extremely thin layer of silicon dioxide (SiO2) insulator as a charge inverter in indium gallium nitride (InGaN) light-emitting diodes (LEDs), improving light output power and ...
Chien-Chung Lin, Huang-Yu Lin, Kuo-Ju Chen, Sheng-Wen Wang, Kuan-Yu Wang, Jie-Ru Li, Huang-Ming Chen and Hao-Chung Kuo The use of distributed Bragg reflectors in remote-phosphor white-LED packaging significantly improves luminous ...
Tags: White LED Packaging
Rearchers in China claim the first radio frequency (RF) switch device based on indium gallium arsenide (InGaAs)-channel metal-oxide-semiconductor field-effect transistor (MOSFET) technology [Zhou Jiahui et al, J. Semicond. 2016, vol37, ...
Tags: InGaAs MOSFET RF switch
Researchers based in USA have been studying performance improvements in aluminium gallium nitride (AlGaN) ultraviolet (UV) avalanche photodiodes (APDs) gained from using free-standing gallium nitride substrates instead of gallium nitride on ...
Tags: AlGaN, Ultraviolet photodetectors, HVPE
At the 2015 Elektra Awards ceremony at The Lancaster Hotel in London on 24 November, Cambridge Nanotherm Ltd of Haverhill, Suffolk UK, a producer of thermal management technology, has won the LED Lighting Product of the Year award (beating ...
Ferroelectric materials have applications in next-generation electronics devices from optoelectronic modulators and random access memory to piezoelectric transducers and tunnel junctions. Now researchers at Tokyo Institute of Technology ...
Edmund Optics® (EO), the premier provider of optical components, announces that customers in China now have direct access to over 1,600 high performance laser optics from Edmund Optics’ large inventory of stock optics ready for ...
Tags: Laser Optics, Edmund Optics
Solvay Specialty Polymers, a world leader in the research, development and manufacturing of high-performance materials designed to master the most challenging requirements in the semiconductor industry, will showcase at Semicon Taiwan 2015 ...
Tags: Solvay, Specialty Polymers, Semicon Taiwan
Jijun Feng and Ryoichi Akimoto based in China and Japan have developed low-threshold green and green-yellow laser diodes (LDs) based on a beryllium zinc cadmium selenide (BeZnCdSe) quantum well [Appl. Phys. Lett., vol107, p161101, 2015]. ...
Tags: laser diodes, zirconium dioxide
Emcore Corp of Alhambra, CA, USA, which provides indium phosphide (InP)-based optical chips, components, subsystems and systems for broadband and specialty fiber-optics markets, has expanded its range of laser diode and avalanche photodiode ...
Tags: optical chips, subsystems
Oxford Instruments says that several PlasmaPro 800 plasma-enhanced chemical vapour deposition (PECVD) systems have been ordered by China's Enraytek Optoelectronics Co for manufacturing high-brightness LEDs. Enraytek's key products are ...