Engineers at Imec and IBM have independently developed new manufacturing processes for making the next decade's leading chips, they revealed late last year. These efforts will allow the marriage of silicon wafers and certain exotic ...
Tags: Electrical, Electronics
Despite graphene's many impressive properties, its lack of a bandgap limits its use in electronic applications. In a new study, scientists have theoretically shown that a bandgap can be opened in graphene by folding 2D graphene sheets ...
Tags: Graphene, Electrical, Electronics
At the IEEE International Electron Devices Meeting (IEDM 2013) in Washington DC (9-11 December), epiwafer foundry and substrate maker IQE plc of Cardiff, Wales, UK, Pennsylavania State University and the US Commerce Department's National ...
Tags: Low-Power Tunneling Transistor, Electrical, Electronics
University of California Santa Barbara (UCSB) researchers have been studying the effect of using undoped vertical spacers in the source and drain contacts to reduce off-state leakage in indium arsenide (InAs)-channel ...
Tags: Electrical, Electronics, Mosfets
Researchers at Meijo University and Nagoya University, Japan, have produced low-resistance n-type aluminium gallium nitride (n-AlGaN) [Toru Sugiyama et al, Appl. Phys. Express, vol6, p121002, 2013]. Using the n-AlGaN as part of an ...
Tags: LED, Electrical, Electronics
At the IEEE International Electron Devices Meeting (IEDM 2013) in Washington D.C., USA (9-11 December), nanoelectronics research institute imec of Leuven, Belgium reported the first functional strained germanium (Ge) quantum-well channel ...
Tags: FinFETs III-V CMOS, Electrical, Electronics
At the IEEE International Electron Devices Meeting (IEDM 2013) in Washington DC (9-11 December), epiwafer foundry and substrate maker IQE plc of Cardiff, Wales, UK, Pennsylavania State University and the US Commerce Department's National ...
Tags: IQE, Electrical, Electronics
Currie Technologies is now distributing Belon's Electron Wheel, a 26-inch front wheel with an integrated electric motor. Currie, an Accell Group company, will make the wheel available to dealers starting next month. The wheel can be ...
Tags: currie, distribute, powered, front wheel
University of California Santa Barbara (UCSB) and Fuji Electric Corp of America have been developing indium gallium nitride (InGaN) solar cell structures in efforts to extend the conversion efficiency of multi-junction photovoltaic (PV) ...
Tags: Nitride Barriers, Electrical
Japan’s Tottori University has produced blue-green light-emitting diode (LED) structures using zinc sulfide telluride (ZnSTe) material [Kunio Ichino et al, Appl. Phys. Express, vol6, p112102, 2013]. The researchers see their work as ...
A Korea/USA team of engineering researchers has developed a gallium nitride (GaN) metal-oxide-semiconductor high-electron-mobility transistor (MOSHEMT) with embedded Schottky barrier diode (SBD) [Bong-Ryeol Park et al, Semicond. Sci. ...
Tags: GaN Transistors, Embedding
RWTH Aachen University has reported the first small-signal response frequency characteristics for p-channel gallium nitride (GaN) heterostructure field-effect transistors (HFETs) [Herwig Hahn et al, Jpn. J. Appl. Phys., vol52, p128001, ...
Tags: GaN HFETs GaN MOCVD, Electrical, Electronics
Tokyo-based Mitsubishi Electric Corp has launched the MGF4937AM gallium arsenide (GaAs) high-electron-mobility transistor (HEMT), as a low-noise amplifier (LNA) for receiver modules in direct broadband satellites (DBS) and very small ...
The Saskatchewan Research Council (SRC) officially opened its new mineral processing pilot plant in Saskatoon today. The pilot plant, announced in the fall of 2012, is now fully operational and has been well-received by the mining industry, ...
Tags: Mineral, Metallurgy
China’s Xidian University has produced ‘normally-off’ gallium nitride (GaN) high-electron-mobility transistors (HEMTs) with a thin high-aluminium-content aluminium gallium nitride (AlGaN) barrier layer [Kai Zhang et al, ...
Tags: Xidian University, normally-off, GaN, HEMTs