Said Furniture Trade, had to put music from, and bring music from, you have to talk about the Louvre. Louvre International Furniture Exhibition Center, construction area of more than 20 million square meters, is the world's largest single ...
Tags: High-End Furniture
Coming off the success of their Las Vegas Market Chatter Over Cocktails, the Next Generation-NOW group has announced it is hosting its first online NGN Huddle on August 22 at 11 a.m. PDT. NGN Huddles are the perfect place for members to ...
Tags: furniture
ROSEVILLE,Calif.—Next Generation-NOW will host its first online NGN Huddle next week on the topic of generational transition. Family business owners from Gates Home Furnishings,Grants Pass,Ore.,and Coconis Furniture,South ...
Tags: generational transition, Home Furnishings, The NGN Huddle
UK-A number of important additions to the London edition of the PLASA Professional Development Programme have been announced.The 80 free-to-attend sessions form the backbone of the 2012 edition of the PLASA Show,which takes place on Sunday ...
Tags: Plasa, new style, new style programme, Future Trends Programme
Xilinx says it has increased the top processing performance spec of its Zynq-7000 programmable SoC devices to 1GHz. This is a 25%increase over initial specifications for the two largest Zynq-7000 devices. Target applications are ...
Tags: Xilinx, Zynq, FPGA, CPLD, TSMC, Electrical&Electronics
Latest issue of Semiconductor Today now available For coverage of all the key business and technology developments in compound semiconductors and advanced silicon materials and devices over the last month,subscribe to Semiconductor ...
Tags: Issue, Semiconductor, Lights
University of Massachusetts Lowell, Universidad de Salamanca, and North Carolina State University have integrated aluminium oxide dielectric into III-V ballistic deflection transistors (BDTs) for the first time [Vikas Kaushal et al, IEEE ...
Tags: Aluminium Oxide, Ballistic Deflection, Improved Transconductance
UK-When the eyes of the world are upon you,you need to be shown in your best light!And what higher profile could you have than the Queen's Diamond Jubilee Concert,held on 4 June 2012 outside the gates of Buckingham Palace before an audience ...
Tags: Queen's Diamond Jubilee, Stage, Broadcast, Lighting Show
University of Notre Dame (UND) and IQE RF LLC of Somerset, NJ, USA have achieved record cut-off frequencies of 370GHz for InAlN/AlN/GaN/SiC high-electron-mobility transistors. The use of indium aluminum nitride (InAlN) barrier layers ...
Tags: Raw Material
Taiwan-based researchers have been working to reduce nitride semiconductor high-electron-mobility transistor(HEMT)costs by developing copper interconnect structures compatible with production processes on silicon substrates[Yueh-Chin Lin et ...
Tags: HEMT, Breakdown Voltages, Copper, Gold
IDG News Service-Microsoft has won a motion to dismiss a seven-year-old,$1.3 billion lawsuit from Novell charging Microsoft with illegal antitrust actions around its Windows 95 release. In his ruling,U.S.District Judge Frederick Motz ...
A little bit of semiconductor magic made a lot of difference to RF power amplifiers,and looks like it will do the same for mains PSUs. That magic is the'two-dimensional electron gas'that forms between layers in certain semiconductor ...
Tags: GaN, semiconductor, RF power amplifiers, GaAs, SiC, PSU, JFET
Researchers in China based at State Key Laboratory of Optoelectronic Materials and Technologies,Sun Yat-Sen University,have demonstrated a selective area growth(SAG)method for recessing gates in aluminium gallium nitride(AlGaN)semiconductor ...
Listen up,punks:it's time for a criminological theory lesson.In 1982,social scientist James Q.Wilson proposed that urban disorder and vandalism had an effect on wider crime and anti-social behaviour rates in major inner cities.He stated ...
Tags: Fix up your exteriors, deter thieves, Outdoor wall lights
11 May 2012 Record transconductance of 1105mS/mm for GaN/InAlN MIS-HFET University of California Santa Barbara(UCSB)has produced gate-first self-aligned metal-insulator-semiconductor heterostructure field-effect ...
Tags: GaN/InAlN, MIS-HFET, UCSB, semiconductor material