University of California Santa Barbara (UCSB) in the USA has improved hole concentrations in p-type gallium nitride (p-GaN) by using indium as a surfactant in ammonia-based molecular beam epitaxy (NH3MBE) [Erin C. H. Kyle et al, Appl. Phys. ...
Tags: Gallium Nitride, Indium Surfactant
Richard Eden, senior analyst (Power Semiconductors) at market research firm IHS Technology, attended the recent PCIM (Power Conversion Intelligent Motion) Europe 2015 tradeshow in Nuremberg, Germany (19-21 May), and in a Research Note has ...
Tags: GaN SiC, Power electronics
Researchers in South Korea have used electrochemical potentiostatic activation (EPA) to alter the hydrogen content in p-type gallium nitride (GaN) layers with a view to improved performance of light-emitting diodes (LEDs) [June Key Lee et ...
Tags: GaN layers, P-Gallium Nitride
In booth 4D18 at PCIM (Power Conversion Intelligent Motion) Asia 2015 in Shanghai (24–26 June), GaN Systems Inc in Ottawa, Ontario, Canada – a fabless developer of gallium nitride (GaN)-based power switching semiconductors for ...
Tags: GaN Systems, Power electronics, Transistor
At SID's Display Week 2015 event in San Jose, CA, USA (31 May-5 June), Grenoble-based micro/nanotechnology R&D center CEA-Leti of France announced that it has demonstrated a path to fabricating high-density micro-LED arrays for the next ...
Tags: Leti III-V lab microLED, Electrical, Electronics, LED
Seren Photonics Ltd of Pencoed Technology Park, UK, which was spun off from the University of Sheffield in 2009 with funding from venture capital firm FusionIP plc (now part of IPGroup plc), was one of six firms to win an award for best ...
Epitaxial deposition and process equipment maker Veeco Instruments Inc of Plainview, NY, USA says that Xiamen Changelight Co Ltd of Xiamen, China has purchased multiple TurboDisc EPIK 700 gallium nitride (GaN) metal-organic chemical vapor ...
Tags: LED, MOCVD Systems
Plextek RF Integration of Great Chesterford, near Cambridge, UK, which designs and develops RFICs, MMICs and microwave/millimeter-wave modules, says that its CEO Liam Devlin is presenting the paper 'Designing GaN PA MMICs' in the Microwave, ...
Tags: Plextek, Microwave Circuit
After a successful 2013, the market for RF power semiconductors for wireless infrastructure blew off the chart in 2014, according to a new report from market analyst firm ABI Research. The Asia-Pacific region, and China specifically, ...
Although wireless backhaul radio quantities will grow slowly to about 1.7 million units in 2019, price erosion will cause the corresponding RF component revenue in the segment to decline at a compound average growth rate (CAGR) of minus 2% ...
Tags: RF component, Electronics
GaN Systems Inc in Ottawa, Ontario, Canada – a fabless developer of gallium nitride (GaN)-based power switching semiconductors for power conversion and control applications – is claiming that its GS66504B – one of a family ...
Tags: GaN Systems, Power electronics, GaN SiC
Advantech Wireless Inc of Montreal, Canada (which manufactures satellite, RF equipment and microwave systems) has launched a 50W X-band gallium nitride (GaN)-based solid-state power block up-converter (SSPB/BUC) for tactical military ...
Tags: Advantech Wireless, RF equipment
At the Power Conversion Intelligent Motion (PCIM) Europe 2015 event in Nurnberg, Germany (19-21 May), president Girvan Patterson of GaN Systems Inc in Ottawa, Ontario, Canada - a fabless developer of gallium nitride (GaN)-based power ...
Microsanj LLC of Santa Clara, CA, USA - a supplier of high-resolution, thermoreflectance imaging analysis (TIA) c, tools and consulting services - participated in three conferences during Microwave Week in Phoenix, Arizona. At the 2015 ...
Tags: TIA system, thermal imaging system
At the IEEE MTT-S International Microwave Symposium (IMS 2015) in Phoenix, AZ (19-21 May), M/A-COM Technology Solutions Inc of Lowell, MA, USA (which makes semiconductors, components and subassemblies for analog RF, microwave, ...
Tags: Power Transistor, Linear Operation