Soraa Inc of Fremont, CA, USA, which develops solid-state lighting technology built on 'GaN on GaN' (gallium nitride on gallium nitride) substrates, has been selected by the US Department of Energy's (DOE) Advanced Research Projects ...
Tags: GaN substrates
Soraa will lead DOE funded research on GaN LED substrates 08 Aug 2012 The DOE's transformational-energy agency ARPA-E has selected GaN-on-GaN startup Soraa to lead a project on the development of bulk GaN substrates. Startup Soraa emerged ...
Tags: Soraa, DOE, GaN, GaN-on-GaN, LED, LED Substrates, ARPA-E
Toshiba plans silicon-based LED production; Azzurro installs Veeco MOCVD 31 Jul 2012 Veeco Instruments announced that Azzurro Semiconductors has commissioned a new Veeco MOCVD reactor for silicon-based LED production while Toshiba plans to ...
Aixtron's revenue rebounds by 10%; non-LED activities gaining traction Deposition equipment maker Aixtron SE of Herzogenrath, Germany says that, for second-quarter 2012, its revenues and orders have stabilized at the levels of Q1/2012. ...
Tags: Aixtron MOCVD
Veeco Instruments Inc.announced that AZZURRO Semiconductors AG,a pioneer in GaN-on-Si technology headquartered in Germany,has recently placed into production the TurboDisc®K465i™gallium nitride(GaN)Metal Organic Chemical Vapor ...
Tags: The MOCVD system, GaN-on-Silicon Epiwafer, Dr.Markus Sickmöller
Philips and Dialight benefit from LED focus 24 Jul 2012 Philips is continuing to drive the LED transformation within the lighting industry, while Dialight is benefitting from a focus on LED lighting for heavy industrial and hazardous ...
Tags: LED lighting
AZZURRO chooses Veeco K465i MOCVD system for GaN-on-Si epi production Epitaxial deposition and process equipment maker Veeco Instruments Inc of Plainview,NY,USA says that AZZURRO Semiconductors AG of Magdeburg,Germany,which makes gallium ...
Aixtron launches AIX G5+ 5x200mm GaN-on-Si package for G5 With its latest product, AIX G5+, deposition equipment maker Aixtron SE of Herzogenrath, Germany has introduced a 5x200mm GaN-on-Si (gallium nitride on silicon) technology package ...
Tags: new product, GaN-on-Si, MOCVD
With its latest product,AIX G5+,AIXTRON SE has introduced a 5x200 mm GaN-on-Si(Gallium Nitride on Silicon)technology package for its AIX G5 Planetary Reactor platform.Following a customer-focused development program,this technology was ...
Tags: AIXTRON, AIX G5+, GaN-on-Si technology, MOCVD
Veeco Instruments,a process equipment solution provider for the production of wireless chips,MEMS,hard drives,power electronics,LEDs,and optoelectronics,has announced the participation of over 150 LED manufacturing customers at its metal ...
Tags: LED, Manufacturers, Taiwan
Power electronics device market to reach $20bn this year The total market for semiconductor devices (discretes, modules and ICs) dedicated to the power electronics industry will reach $20bn in 2012, according to the report 'Status of the ...
Tags: raw material, GaN SiC
EpiGaN starts 8-inch GaN-on-Si development on Aixtron reactors Deposition equipment maker Aixtron SE of Herzogenrath, Germany says that new customer EpiGaN of Hasselt, Belgium, a start-up manufacturer of III-nitride epitaxial material, ...
Tags: Aixtron MOCVD
AIXTRON SE announced that EpiGaN, a new customer and a start-up manufacturer of III-Nitrides epitaxial material in Hasselt, Belgium, has successfully commissioned two new MOCVD systems, able to operate either in multiple 6” or in ...
Tags: MOCVD, GaN-on-Si Wafer
Despite a cumulative silicon carbide (SiC) raw wafer and epiwafer market that will not exceed $80m in 2012, the body of related patents comprises more than 1772 patent families and over 350 companies since 1928, according to the report ...
Tags: Raw Material, Wafer
The Gallium Nitride (GaN) semiconductor device market is expected to reach $12.6m by the end of 2012, and the phenomenal growth rate of 60-80% year-on-year is expected to continue in subsequent years, according to the report ‘Gallium ...
Tags: Raw material, GaN