Friedrich-Alexander University Erlangen-Nuremberg,Germany,and ACREO AB,Sweden,have developed a transistor technology combining graphene with silicon carbide(SiC)[S.Hertel et al,Nature Communications,published 17 July 2012]. Graphene is a ...
Tags: transistor, Graphene, Electrical
Hittite Microwave Corp of Chelmsford,MA,USA(which designs and supplies analog,digital and mixed-signal RF,microwave and millimeter-wave ICs,modules and subsystems as well as instrumentation)has launched a broadband high IP3 downconverter ...
Tags: Hittite Microwave Corp
Hong Kong University of Science and Technology has achieved record maximum drain currents and peak transconductances for enhancement-mode(normally off)metal–oxide–(nitride)semiconductor heterojunction field-effect ...
Taiwan National Tsing Hua University has used a hybrid ohmic-Schottky drain to reduce buffer leakage and improve breakdown performance in aluminium gallium nitride(AlGaN)semiconductor transistors produced on silicon substrates[Yi-Wei Lian ...
Tags: Nitride HEMTs, Silicon, Taiwan, AlGaN, Semiconductor
22 June 2012 Peregrine adds new 8GHz SP4T RF switch to portfolio At this week's 2012 IEEE MTT-S International Microwave Symposium(IMS)in Montreal,Canada(17-22 June),Peregrine Semiconductor Corp of San Diego,CA,USA,a fabless provider of ...
Tags: Peregrine, IMS 2012, 8GHz SP4T RF switch, UltraCMOS technology
University of Notre Dame (UND) and IQE RF LLC of Somerset, NJ, USA have achieved record cut-off frequencies of 370GHz for InAlN/AlN/GaN/SiC high-electron-mobility transistors. The use of indium aluminum nitride (InAlN) barrier layers ...
Tags: Raw Material
At the 2012 IEEE MTT-S International Microwave Symposium(IMS)in Montreal,Canada(17-22 June),RF front-end component maker and foundry services provider TriQuint Semiconductor Inc of Hillsboro,OR,USA has announced initial sample availability ...
20 June 2012 First 40GHz 2.5W/mm output performance of GaN/Si HEMTs Institute for Electronics,Microelectronics and Nanotechnology(IEMN)in France has demonstrated high-power-density nitride high-electron-mobility transistors(HEMTs)on ...
Tags: GaN/Si HEMTs, IEMN, AlGaN
Taiwan-based researchers have been working to reduce nitride semiconductor high-electron-mobility transistor(HEMT)costs by developing copper interconnect structures compatible with production processes on silicon substrates[Yueh-Chin Lin et ...
Tags: HEMT, Breakdown Voltages, Copper, Gold
RF Micro Devices Inc of Greensboro,NC,USA has launched the RFVA0016,an integrated,analog-controlled,variable-gain amplifier(VGA)for broadband applications with external matching,allowing operation in all bands from 400MHz to 2700MHz with a ...
Tags: RFMD, VGA, Broadband Applications
RF Micro Devices Inc of Greensboro,NC,USA has launched the RFHA1006,a wideband power amplifier designed for continuous-wave(CW)and pulsed applications including:class AB operation for public mobile radio;power amplifier stages for ...
Singapore and Hong Kong researchers have developed a gold-free CMOS-compatible process for nitride semiconductor metal–oxide–semiconductor high-electron-mobility transistors(MOS-HEMTs)[Xinke Liu et ...
Tags: Nitride MOS-HEMTs MOCVD, MOS-HEMTs, AlGaN
Megger's new high-voltage insulation resistance testers(IRTs)offer exceptional versatility in a compact,rugged and light unit that weighs little more than half as much as its predecessors. Capable of providing accurate measurements up to ...
Tags: Megger, IRTs, MITs, Insulation tester
SemiSouth Laboratories Inc of Starkville, MS, USA (which designs and manufactures silicon carbide device for high-power, high-efficiency, harsh-environment power management and conversion applications) claims that, after first ...
Tags: SemiSouth, USA, manufactures
SemiSouth Laboratories Inc of Starkville, MS, USA (which designs and manufactures silicon carbide device for high-power, high-efficiency, harsh-environment power management and conversion applications) has launched a 1700V/1400m ...
Tags: SemiSouth, power supplies, USA