Samsung Electronics Co Ltd of Seoul, Korea has launched Fx-CSP - a line-up of LED packages featuring chip-scale packaging (CSP) and flexible circuit board technology - for use in automotive lighting applications. "Our new Fx-CSP line-up ...
GEW has introduced a new fully aircooled LED UV curing system for the label printing, coating and digital printing industry. The aircooled LED UV curing system lamphead LA1 is compatible with existing ArcLED systems without the need for ...
Tags: UV curing system, LED, ArcLED system
Researchers at Hong Kong University of Science and Technology (HKUST) are proposing using III-nitride and silicon carbide (SiC) hybrid technologies for high-voltage power devices [Jin Wei et al, IEEE Transactions on Electron Devices, vol63, ...
STMicroelectronics of Geneva, Switzerland says that its silicon carbide (SiC) metal–oxide–semiconductor field-effect transistor (MOSFET) devices have enabled the ZapCharger Portable (claimed to be the world's smallest ...
Tags: transistor, Electric-Car Charger
Researchers in Hong Kong and China have claimed the first demonstration of gallium nitirde (GaN) fully vertical p-type-intrinsic-n-type (p-i-n) junction diodes on silicon (Si) [Xinbo Zou et al, IEEE Electron Device Letters, published online ...
Tags: GaN devices, Silicon Substrate
Siemens and Valeo have signed an agreement to establish a joint venture (JV) to develop powertrains for electric cars. The JV will have headquarters in Erlangen, Germany, and facilities in France, Norway, Poland, Hungary and China. ...
Tags: Siemens, Valeo, JV, Joint venture, Powertrains, Electric cars
Deposition equipment maker Aixtron SE of Herzogenrath, near Aachen, Germany says that its G5+ C multi-wafer batch metal-organic chemical vapor deposition (MOCVD) platform has been qualified for the manufacturing of specific buffer layers as ...
VisIC Technologies Ltd of Nes Ziona, Israel, a fabless developer of power conversion devices based on gallium nitride (GaN) metal-insulator-semiconductor high-electron-mobility transistors (MISHEMTs) founded in 2010, has introduced a ...
The US Department of Defense's Air Force Research Laboratory, Sensors Directorate, Devices for Sensing Branch (AFRL/RYDD) has issued a Request For Information (RFI) titled 'Development of Large Diameter Silicon Carbide Substrate and ...
GE Aviation (an operating unit of GE) has been awarded a $2.1m contract from the US Army to develop and demonstrate silicon carbide (SiC)-based power electronics supporting high-voltage next-generation ground vehicle electrical power ...
Tags: GE Aviation, SiC power devices
South Korean LED maker Seoul Semiconductor Co Ltd says that its Acrich MJT 5630D package has achieved record luminous efficiency of 210lm/W for a single LED package, and the package's mass production has begun. Seoul Semiconductor has ...
Tags: Seoul Semiconductor, LEDs, Acrich MJT 5630
At the Cisco Live! 2016 Berlin event (15-19 February), LED chip, lamp and lighting fixture maker Cree Inc of Durham, NC, USA has introduced SmartCast Power over Ethernet (PoE), a simple, scalable and open platform that enables the Internet ...
Tags: IP network, SmartCast PoE
In booth 2712 (Hall A) at SEMICON Korea 2016 in Seoul (27-29 January), Advanced Energy Industries Inc of Fort Collins, CO, USA is highlighting its power and control technologies. Among its process power, high-voltage power and thermal ...
Japanese UV LED manufacturer Nikkiso is collaborating with Formosa Plastics Group to build the world’s largest UV LED factory in Taiwan, reported Japanese media Nikkei. The UV LED factory will be entering mass volume production ...
Tags: UV LED, fluorescent UV lamps
A team of engineers from Cornell University, the University of Notre Dame and the semiconductor company IQE has created gallium nitride (GaN) power diodes capable of serving as the building blocks for future GaN power switches -- with ...
Tags: GaN p-n junction diodes, GaN Power Switches, solid-state lighting