Researchers at Massachusetts Institute of Technology (MIT) in the USA have claimed record transconductance for III-V fin field-effect transistors (finFETs) when normalized according to fin width [Alon Vardi and Jesús A. del Alamo, ...
University of Montpellier in France claims the first continuous-wave (cw) operation at room temperature of a 15μm indium arsenide (InAs) quantum cascade laser (QCL) [Alexei N. Baranov et al, Optics Express, vol. 24, p18799, 2016]. "To ...
Tags: University of Montpellier, InAs, MBE
Raytheon UK's Integrated Power Solutions (IPS) business unit in Glenrothes, Scotland, has developed a high-temperature, small-form-factor bridge leg power module. Aimed at high-speed switching applications, the module has potential uses in ...
Tags: Raytheon, Electrical Switching
Rensselaer Polytechnic Institute and General Electric Global Research Center in the USA "experimentally demonstrate, for the first time, bi-directional 4H-silicon carbide planar gate, insulated-gate bipolar transistors (IGBTs) fabricated on ...
Tags: Bipolar Transistor
Researchers based in Taiwan and USA have increased the modulation bandwidth of indium gallium nitride (InGaN) light-emitting diodes (LEDs) [Jin-Wei Shi, IEEE Electron Device Letters, published online 26 May 2016]. The enhanced bandwidth was ...
Xidian University in China has used pulsed metal-organic chemical vapor deposition (MOCVD) to increase indium gallium nitride (InGaN) room-temperature channel mobility to 1681cm2/V-s, which is claimed to be a record [Yachao Zhang et al, ...
Sophia University in Japan has developed a technique for growing laser diodes on an indium phosphide (InP) layer bonded to silicon (Si) [Keiichi Matsumoto et al, Appl. Phys. Express, vol9, p062701, 2016]. The researchers claim that this is ...
Tags: Laser Diodes, Si Substrates
Researchers in Hong Kong and USA have developed indium arsenide (InAs) quantum dot (QD) microdisk lasers directly integrated on silicon (Si) with performance comparable to the best reported for similar devices on gallium arsenide (GaAs) ...
Tags: InAs quantum dot microdisk lasers InAs GaAs substrates
Shigeya Kimura, Hisashi Yoshida, Toshihide Ito, Aoi Okada, Kenjiro Uesugi and Shinya Nunoue Metal organic chemical vapor deposition is used to grow aluminum gallium nitride interlayers within indium gallium nitride/gallium nitride ...
The Semiconductor's business unit of Raytheon UK in Glenrothes, Scotland (a subsidiary of Raytheon Company of Waltham, MA, USA) and Newcastle University's School of Electrical and Electronic Engineering have collaborated to produce silicon ...
Tags: Raytheon, Newcastle University, Sic-Based Analog Circuitry
Rearchers in China claim the first radio frequency (RF) switch device based on indium gallium arsenide (InGaAs)-channel metal-oxide-semiconductor field-effect transistor (MOSFET) technology [Zhou Jiahui et al, J. Semicond. 2016, vol37, ...
Tags: InGaAs MOSFET RF switch
To celebrate the festivities, Gemperle Family Farms has designed several all-natural crafts that make perfect gifts for friends and family. "We admit we are egg nerds at Gemperle Family Farms and Easter is one of our favorite days of the ...
Tags: Gemperle Farms, All-natural crafts, Easter egg seed bombs
Researchers in the UK have claimed the first demonstration of laser diodes grown directly on silicon that perform up to 75°C and 120°C under continuous wave (cw) and pulsed operation, respectively [Siming Chen et al, Nature ...
Tags: Quantum dot lasers, GaAs, Silicon substrate, MBE
Cooking, home entertaining, and baking just got infinitely easier with the creation of the biēm butter sprayer, a first-of-its-kind kitchen tool that lets users convert a stick of real butter from solid to liquid spray in seconds. ...
Sherpa Clinical Packaging has completed a new 37,500 ft2 clinical packaging and distribution facility in San Diego, US. Featuring cold chain management infrastructure, the new facility provides purpose built space for primary and ...
Tags: Clinical Packaging, Packaging