Singapore’s Nanyang Technological University has made a first demonstration of nitride semiconductor high electron mobility transistors (HEMT) grown on silicon substrates using ammonia molecular beam epitaxy (MBE) rather than the ...
Tags: Singapore, Technological University, electron mobility transistors
Cree, Inc. announces its latest silicon carbide (SiC) offering with low basal plane dislocation (LBPD) 100-mm 4H SiC epitaxial wafers. This LBPD material exhibits a total BPD density of < 1 cm-2 in the epitaxial drift layer, with BPDs ...
Tags: Wafer
Cree continues to lead the SiC materials marketplace in driving to larger diameters and this latest advancement lowers device cost and enables adoption for customers with existing 150-mm diameter device processing lines. 150-mm epitaxial ...
Tags: Wafer
4 September 2012 Hitachi Cable demo first GaN vertical diode with 3000V breakdown and 1mΩcm2 on-resistance Picture:GaN substrates for power devices.Hitachi Cable Ltd says that it has succeeded in the trial manufacture of what is ...
Tags: Hitachi Cable, GaN, diode
Cree Inc of Durham,NC,USA has introduced low basal plane dislocation(LBPD)100-mm 4H silicon carbide(SiC)epitaxial wafers.This LBPD material exhibits a total BPD density of 1 cm-2 in the epitaxial drift layer,with BPDs capable of causing Vf ...
Dongguan Tianyu Semiconductor Technology Co Ltd,which claims to be the first manufacturer of silicon carbide(SiC)epitaxial wafers in China,has started to expand its SiC epiwafer business globally after the completion of three contracts in ...
Cree Inc of Durham, NC, USA has announced the availability of high-quality, low-micropipe 150mm 4H n-type silicon carbide (SiC) epitaxial wafers, with highly uniform epitaxial layers as thick as 100 microns available for immediate purchase ...
Tags: SiC wafer
Deposition equipment maker Aixtron SE of Herzogenrath,Germany says that Showa Denko of Chichibu,Japan has added a SiC CVD Warm-Wall Planetary Reactor system to its Aixtron equipment base,capable of handling either ten 100mm or six 150mm ...
Tags: Aixtron, Showa Denko, CVD system, deposition equipment maker
All American extends distribution agreement with GeneSiC Electronic component distributor All American Semiconductor has signed extended its distribution agreement with GeneSiC Semiconductor Inc of Dulles,VA,USA,which develops silicon ...
Tags: GeneSiC SiC, Distribution, Agreement
Researchers in Switzerland and the USA have reported the first large-signal performance for a gallium nitride on silicon(GaN-on-Si)high-electron-mobility transistors with output power density of 2W/mm and associated peak power-added ...
Tags: GaN/Si, HEMTs, high-electron-mobility transistors, frequency performance
Rex-Cut Abrasives has introduced Type 1 non-woven cotton fiber abrasive wheels that are ideally suited for mechanically removing braze and residual oxides from large assemblies. Especially effective for robotic applications, they come in a ...
Tags: Learning Center, Abrasive Wheel
GMSI has developed a proprietary method of applying a chemical vapor deposited(CVD)silicon carbide ceramic coating on precision machined graphite shapes.The resultant product is used in the manufacture of Light Emitting Diodes(LEDs)for the ...
Tags: GMSI, CVD, LED, solid state lighting, MOCVD
The Los Angeles 2.0 MR16 LED light bulb from LED Waves is less than 5 W and can be used to replace a 35 W halogen MR16.This bulb features a heat sink design,which could be accomplished by Computer Numeric Control machining. This ...
Tags: LEDs lighting, the Los Angeles, array of 4 XB-D chips, a heat sink design
Reducing noise at high frequency in nitride-on-silicon transistors France’s Institute of Electronic, Microelectronic and Nanotechnology (IEMN) has produced the first benchmark for low-noise gallium nitride on silicon transistors in ...
Tags: GaN/Si HEMTs MOCVD IEMN, Lights, Lighting, nitride-on-silicon transistors
Soraa Inc of Fremont, CA, USA, which develops solid-state lighting technology built on 'GaN on GaN' (gallium nitride on gallium nitride) substrates, has been selected by the US Department of Energy's (DOE) Advanced Research Projects ...
Tags: GaN substrates