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nitride on silicon transistors
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GaN-Based Transistors Are Promising for Future High-Frequency/High-Power Devices
Mar 22, 2013The first millimeter-wave power demonstration of aluminium gallium nitride/gallium nitride (AlGaN/GaN) high-electron-mobility transistors (GaN) grown on a (110) silicon substrate has been claimed by a French team of researchers [A. Soltani ...
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Transphorm Has Launched The Total GaN Family of Gallium Nitride on Silicon Transistors
Mar 18, 2013Transphorm Inc of Goleta, near Santa Barbara, CA, USA (which designs and delivers power conversion devices and modules) has launched the Total GaN family of gallium nitride on silicon transistors and diodes, establishing what is claimed to ...
Tags: Transphorm, power devices, GaN device
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Reducing Noise at High Frequency in Nitride-on-Silicon Transistors
Aug 10, 2012Reducing noise at high frequency in nitride-on-silicon transistors France’s Institute of Electronic, Microelectronic and Nanotechnology (IEMN) has produced the first benchmark for low-noise gallium nitride on silicon transistors in ...
Tags: GaN/Si HEMTs MOCVD IEMN, Lights, Lighting, nitride-on-silicon transistors