Wide-bandgap (WBG) semiconductor materials such as silicon carbide (SiC) and gallium nitride (GaN) are best positioned to address emerging power electronics performance needs in electric vehicles (EVs), with SiC displacing silicon as early ...
Tags: Power electronics GaN SiC, Electric Vehicle, Electrical, Electronics
China's Nanjing University of Posts and Telecommunications has improved the performance of indium gallium nitride (InGaN) light-emitting diodes (LEDs) on silicon (Si) substrate by removing the substrate from the region under the device ...
Tags: Silicon wafer, Electrical, Electronics
Researchers in Taiwan have applied a non-vacuum process to deposit aluminium oxide (Al2O3) passivation for nitride semiconductor high-electron-mobility transistors (HEMTs) [Bo-Yi Chou et al, IEEE Electron Device Letters, published online 11 ...
Tags: Electrical, Electronics, Transistor
M/A-COM Technology Solutions Inc of Lowell, MA, USA (which makes analog semiconductors, components and subassemblies for analog, RF, microwave and millimeter-wave applications) has launched a gallium nitride on silicon carbide (GaN-on-SiC) ...
Tags: M/A-COM GaN RF power transistors, transistors, Electrical, Electronics
Changelight Co Ltd of Xiamen, China has selected epitaxial deposition and process equipment maker Veeco Instruments Inc of Plainview, NY, USA as its primary equipment provider as it enters the market to produce gallium nitride (GaN)-based ...
Tags: LED, Electrical, Electronics
Epistar Corp (Taiwan’s largest manufacturer of LED epiwafers and chips) is to issue 174.612 million new shares (worth NT$10 each, totalling NT$1746.12m) to acquire fellow Taiwanese LED epiwafer and chip maker Formosa Epitaxy Inc ...
Tags: LED epiwafers, LED chips
Under the leadership of the European Defence Agency (EDA), the multi-national R&D project MANGA (Manufacturable GaN-SiC-substrates and GaN epitaxial wafers supply chain) says that it has succeeded in implementing a supply chain for the ...
Tags: GaN Technologies, HEMT structures, electronics components
Turkey's Bilkent University has used hollow-cathode plasma-assisted atomic layer deposition (HCPA-ALD) to make gallium nitride (GaN) thin-film transistors (TFTs) at temperatures below 250°C [S. Bolat et al, Appl. Phys. Lett., vol104, ...
Tags: HCPA-ALD GaN Thin-film transistors, Electrical, Electronics, Transistors
UK-based Plessey has entered into a distribution agreement with CODICO GmbH, a demand creation distributor for electronic components, headquartered in Perchtoldsdorf, Austria and with offices across Europe. With CODICO, Plessey is expanding ...
Tags: LED, Electrical, Electronics, LED products
Directed by Infineon Technologies AG together with partners Aixtron, SiCrystal AG and SMA Solar Technology AG, the three-year German project NeuLand (begun in late 2010) has developed highly integrated components and electronic circuits ...
Researchers in Taiwan claim to be the first to use bumping technology to create piezoelectric-induced performance enhancement in flip-chip packaged aluminium gallium nitride (AlGaN) high-electron-mobility transistors (HEMTs) [Szu-Ping Tsai ...
Agilent Technologies Inc of Santa Clara, CA, USA has announced several innovations for the 2014 release of its suite of device modeling and characterization software tools. The suite comprises the Integrated Circuits Characterization and ...
Tags: GaN HEMTs, 3D Finfets
Based on a scenario where electric vehicles and hybrid electric vehicles (EV/HEV) begin adopting gallium nitride (GaN) in 2018-2019, the ramp-up of the GaN power device market will be quite impressive starting in 2016, at an estimated ...
Tags: Yole GaN HEMT Power electronics, Electrical, Electronics
Efficient Power Conversion Corp (EPC) of El Segundo, CA, USA, which makes enhancement-mode gallium nitride on silicon (eGaN) power field-effect transistors (FETs) for power management applications, says that Dr John Glaser has joined its ...
Tags: EPC E-mode GaN FETs, Electrical, Electronics
An international team of researchers has been exploring nanomembranes of beta-phase gallium oxide (β-Ga2O3) as a channel material for high-voltage field-effect transistors (FETs) [Wan Sik Hwang et al, Appl. Phys. Lett., vol104, ...
Tags: Electrical, Electronics, Transistor