Researchers in Singapore have reported high-frequency performance of gallium nitride (GaN) indium aluminium nitride (InAlN) high-electron-mobility transistors (HEMTs) on silicon substrates, including the first noise measurements [S. ...
Tags: Electrical, Electronics
Researchers in Japan and USA have claimed the first experimental demonstration of higher breakdown voltage for slant field-plate (FP) gallium nitride (GaN) high-electron-mobility transistors (HEMTs) over convention field-plate designs ...
Tags: GaN, HEMTs, Electronics
A ‘Research and Education’ zone will feature the world’s first liquid ammonia processing technology for knitted fabrics at Interstoff Asia Essential – Autumn 2014, set to return to the Hong Kong Convention and ...
Tags: Liquid Ammonia Fabric, Interstoff
Deposition equipment maker Aixtron SE of Aachen, Germany says that Mitsubishi Electric Corp (MELCO) of Tokyo, Japan has begun operations with an AIX 2800G4 HT Planetary Reactor system. The 11x4”-wafer configuration metal-organic ...
Tags: Mitsubishi, GaN-on-Si, power amplifiers
M/A-COM Technology Solutions Inc of Lowell, MA, USA (which makes analog semiconductors, components and subassemblies for analog, RF, microwave and millimeter-wave applications) has launched a gallium nitride on silicon carbide (GaN-on-SiC) ...
Tags: M/A-COM, Transistor, Electrical
David Owen, regional sales director for Plessey (left), and John Macmichael, managing director of Solid State Supplies (right) Plessey has entered into a distribution agreement with Solid State Supplies to expand its European network. ...
Tags: Plessey, Distribution Agreement, Lights
Transphorm Inc of Goleta, near Santa Barbara, CA, USA, which designs and provides gallium nitride (GaN)-based power conversion devices and modules for power supplies and adapters, motor drives, solar inverters and electric vehicles, is ...
Tags: Transphorm, Partner, Electrical
UK full-service energy-efficiency specialist SaveMoneyCutCarbon.com has announced a new partnership as Master Distributor for Soraa Inc of Fremont, CA, USA and its GaN-on-GaN (gallium nitride on gallium nitride) technology, which provides ...
Tags: Soraa, Distributor, Electrical
LED manufacturer Plessey has entered into a distribution agreement with CODICO GmbH, a distributor for electronic components, headquartered in Perchtoldsdorf, Austria, and with offices across Europe. Through the agreement with CODICO, ...
Efficient Power Conversion Corp (EPC) of El Segundo, CA, USA, which makes enhancement-mode gallium nitride on silicon (eGaN) power field-effect transistors (FETs) for power management applications, says that, on 3 September (at 11am-12pm ...
Fukuda Crystal Laboratory Co Ltd has grown ScAlMgO4 scandium aluminium magnesium oxide (SCAM) crystal with a diameter of 50mm (2 inches) that could be used as a substrate for gallium nitride (GaN)-based light-emitting devices such as blue ...
Tags: Fukuda Crystal Lab, a diameter, Electrical
Ammono S.A. in Warsaw, Poland, which produces bulk gallium nitride (GaN) using ammonothermal technology, has added a new product in its portfolio – the p-type truly bulk AMMONO-GaN substrate – to be presented by Dr Marcin Zajac ...
Tags: Ammono, Substrates, Electrical
Cree Inc of Durham, NC, USA is enhancing its support of the European market by extending its partnership with UK-based distributor APC Novacom. APC Novacom now stocks all Cree RF devices that do not require a European Union (EU) license, ...
Tags: Cree, APC, Electrical
University of California, Santa Barbara (UCSB) has used photo-electro-chemical etch (PEC) to create 405nm-wavelength vertical-cavity surface-emitting lasers (VCSELs) based on indium gallium nitride (InGaN) multiple quantum wells (MQWs) [C. ...
RF front-end component maker TriQuint Semiconductor Inc of Hillsboro, OR, USA says that it is the first gallium nitride (GaN) RF chip maker to achieve Manufacturing Readiness Level (MRL) 9, meaning that its GaN manufacturing processes have ...
Tags: TriQuint, GaN, front-end component