Seoul National University and Korea Electronics Technology Institute have been developing hafnium dioxide (HfO2) as a gate insulator for aluminium gallium nitride (AlGaN) metal-oxide-semiconductor high-electron-mobility transistors ...
Tags: HfO2, gate insulator, Lights, Lighting
Microsemi has introduced silicon carbide (SiC) standard power modules with industrial temperature grade. Designed for use in high power switch mode power supplies, motor drives, uninterruptible power supplies, solar inverters and oil ...
Tags: Microsemi, silicon carbide, power modules
PragmatIC and Netherlands research lab Holst Centre will jointly develop qualified processes and materials for the Cambridge firm's imprint lithograph process - which forms micron-scale organic transistors on polymer substrates using force ...
Researchers are aiming to develop a new class of materials with remarkable properties using one atom-thick substances such as graphene in a new collaborative project. The proposal, which will involve researchers from the Universities of ...
IGZO: the name doesn't exactly roll off your tongue, but this new technology promises to make your tablet run a bit more smoothly. IGZO is a new technology from Sharp, and it's also an acronym for indium, gallium, zinc, and oxide—a ...
Tags: Sharp, Igzo Technology, silicon materials, smart phone, tablet displays
Researchers at University of Notre Dame and Kopin Corp have developed high-performance nitride semiconductor high-electron-mobility transistors (HEMTs) with indium gallium nitride (InGaN) channels [Ronghua Wang et al, Appl. Phys. Express, ...
Tags: semiconductor, high electron mobility transistors, InGaN
ST-Ericsson has announced its fastest LTE smartphone platform, the NovaThor L8580 ModAp has an eQuad application processor running at up to 2.5GHz. The NovaThor L8580 will be available to sample in Q1 2013. It is built on 28nm ...
Tags: ST Ericsson, smartphone platform, eQuad application processor
Digi-Key has added two new product lines to its global distribution websites. The new lines are GeneSiC Semiconductor, the supplier of silicon-carbide devices and capacitive touch screen specialist Precision Design Associates (PDA). ...
Tags: Digi Key, product lines, global distribution websites, company news
Global Internet-based electronic components distributor Digi-Key Corp of Thief River Falls, MN, USA has agreed to distribute worldwide the silicon carbide (SiC) technologies of GeneSiC Semiconductor Inc of Dulles, VA, USA, which develops ...
Tags: Digi Key Corp, SiC technologies, GeneSiC, global distribution agreement
Qualcomm's keynote at the International CES was packed with big names and even a Big Bird, but CEO Paul Jacobs' focus was on something much smaller -- a new family of processors aimed at high-end smartphones and tablets. The Snapdragon ...
Tags: Qualcomm, International CES, processors, high end smartphone, tablet
Researchers in Singapore claim the first DC and microwave performance measurements for 0.15μm-gate aluminium gallium nitride(AlGaN)on gallium nitride high-electron-mobility transistors(HEMTs)on silicon substrates with gold-free ...
IDG News Service - China will take the wraps off its latest 8-core Godson processor early next year to show its chip-making ability compared to Intel, Advanced Micro Devices and ARM. Loongson Technology, partly funded by the Chinese ...
Tags: PCs, Servers, 8-core Godson processor, Intel, Advanced Micro Devices, ARM
IDG News Service-ARM is catching up with Intel on 3D transistors,announcing a new partnership with Taiwan Semiconductor Manufacturing to manufacture 64-bit chips that are faster and more power-efficient than current chips in which ...
Tags: ARM, 3D transistors, partnership with Taiwan Semiconductor
Qualcomm has agreed to invest up to $120 million in struggling Japanese firm Sharp, with the two companies to work together to develop low-power displays for mobile devices. Qualcomm will invest half of that amount by Dec. 27, with the ...
Tags: Qualcomm, mobile devices, Sharp, low power displays
Researchers at Massachusetts Institute of Technology (MIT) have presented the shortest-gate working transistors yet built using III-V channels [J. Lin et al, IEDM, session 32.1]. The metal-oxide-semiconductor field-effect transistors ...
Tags: transistors, MIT, metal oxide semiconductor