As high-data-rate applications put more strain on LTE wireless networks, solutions such as small-cell base-stations (BTS) and carrier aggregation will be needed to bridge the bandwidth gap in high traffic areas. In response to broader ...
Tags: GaN HEMTs, LTE wireless networks
Massachusetts Institute of Technology (MIT) has demonstrated gallium nitride (GaN) vertical Schottky and p-n diodes on silicon Si substrates “for the first time” [Yuhao Zhang et al, IEEE Electron Device Letters, published online ...
Tags: GaN, MOCVD, Gallium Nitride Diodes
Taiwan's National Tsing Hua University has claimed the highest optical 3dB modulation bandwidth of ~463MHz at 50mA for a 500nm-wavelength blue-green indium gallium nitride (InGaN) LED [Chien-Lan Liao et al, IEEE Electron Device Letters, ...
Tags: blue-green LEDs, taiwan, LED, LED light, Electrical, Electronics
For its fiscal fourth-quarter 2014 (ended 29 March), RF Micro Devices Inc of Greensboro, NC, USA has reported revenue of $256m, down 11.3% on $288.5m last quarter and 8.8% on $280.6m a year ago. Fiscal Q4/2013 Q1/2014 Q2/2014 Q3/2014 ...
Tags: RFMD, Electrical, Electronics
M/A-COM Technology Solutions Inc of Lowell, MA, USA (which makes semiconductors, components and subassemblies for analog, RF, microwave and millimeter-wave applications) has announced the availability and full technical support for 17 ...
Tags: Electrical, Electronics
According to Yole Développement's new market research report 'LED Front-End Manufacturing Trends' (which covers substrates, epitaxy, lithography, plasma etching & deposition, PVD and testing), the LED substrate is one of the key ...
Tags: LED, Electrical, Electronics
Anvil Semiconductors Ltd of Coventry, UK has been awarded a grant by the UK's Technology Strategy Board (TSB) to evaluate the feasibility of using its unique stress relief technology to enable the production of low-cost, high-brightness ...
M/A-COM Technology Solutions Inc of Lowell, MA, USA (which makes semiconductors, components and subassemblies for analog, RF, microwave and millimeter-wave applications) has launched a gallium nitride on silicon carbide (GaN-on-SiC) HEMT ...
Tags: Electrical, Electronics
Researchers in Switzerland and Norway have used strain to alter the light-emitting properties of gallium arsenide (GaAs) nanowires [G. Signorello et al, Nature Communications, vol5, p3655, published online 10 Apr 2014]. The researchers from ...
Tags: Electrical, Electronics
Power semiconductor device maker International Rectifier Corp (IR) of El Segundo, CA, USA is to showcase its latest power management solutions at PCIM (Power Conversion Intelligent Motion) Europe 2014 in the Nuremberg Exhibition Center, ...
Tags: International Rectifier GaN-on-silicon, semiconductor, Electrical
For first-quarter 2014, Hittite Microwave Corp of Chelmsford, MA, USA (which designs and supplies analog, digital and mixed-signal RF, microwave and millimeter-wave ICs, modules and subsystems as well as instrumentation) has reported record ...
Tags: Electrical, Electronics
Efficient Power Conversion Corp (EPC) of El Segundo, CA, USA, which makes enhancement-mode gallium nitride on silicon (eGaN) power field-effect transistors (FETs) for power management applications, has created and posted on line an 11-part ...
Tags: EPC E-mode GaN FETs, Electrical, Electronics
GaN Systems Inc of Ottawa, Ontario, Canada, a fabless developer of gallium nitride (GaN)-based power switching semiconductors for power conversion and control applications, says that Julian Styles, its director of business development USA, ...
Tags: GaN Systems Power electronics, Electrical, Electronics
The global MOCVD equipment market will increase at a compound annual growth rate (CAGR) of 14.13% over the period 2013-2018, forecasts a new report from market analyst firm TechNavio. According to the report 'Global Metal Organic Chemical ...
Tags: MOCVD, Electrical, Electronics, MOCVD Equipment
Efficient Power Conversion Corp (EPC) of El Segundo, CA, USA, which makes enhancement-mode gallium nitride on silicon (eGaN) power field-effect transistors (FETs) for power management applications, has introduced the EPC9016 half-bridge ...
Tags: EPC E-mode GaN FETs, Electrical, Electronics