EV Group of St Florian, Austria (a supplier of wafer bonding and lithography equipment for MEMS, nanotechnology and semiconductor applications) says that over the past year it has seen a significant increase in demand for its wafer bonding ...
Soitec of Bernin, near Grenoble, France, which makes engineered substrates including silicon-on-insulator (SOI) wafers, says that it is defending its rights in an investigation by the US International Trade Commission (ITC) instituted on 18 ...
Tags: Soitec, SOI, Engineered substrates
Specialty foundry TowerJazz (which has fabrication plants at Tower Semiconductor Ltd in Migdal Haemek, Israel, and at its subsidiaries Jazz Semiconductor Inc in Newport Beach, CA, USA and TowerJazz Japan Ltd) has agreed to buy the 8-inch ...
Micro/nanotechnology R&D center CEA-Leti of Grenoble, France and its partners say that they have built three silicon photonics platforms, as they reach the mid-point of the four-year European Union Seventh Framework Program (EU FP7) project ...
Tags: Leti, silicon photonics, STMicroelectronics
Toshiba has announced the development of the next-generation TarfSOI (Toshiba advanced RF silicon-on-insulator) process, optimized for radio-frequency (RF) switch applications. Sample shipments of a new SP12T (single-pole 12-throw switch) ...
Tags: Toshiba, SOI-CMOS, RF switches
The photonic integrated circuit (PIC) market was $0.19bn in 2013 and is expected to increase at a compound annual growth rate (CAGR) of 25.3% from 2015 to $1.3bn in 2022, according to the new market report 'Photonic IC Market - Global ...
After in June launching what it claimed was the lowest-resistance 650V-blocking-voltage transistor (specifying an Rdson as low as 15mOhm), VisIC Technologies Ltd of Rehovot, Israel, a fabless developer of devices based on gallium nitride ...
Tags: VisIC, transistor, semiconductor
Wafer foundry houses in China have stepped up efforts to develop Fully Depleted Silicon-on-Insulator (FD-SOI), or also called Ultra-Thin Body (UTB), processes for wafer production, compared to the Fin Field-Effect Transistor (FinFET) ...
Tags: Insulator, Semiconductor, high density chips
Researchers in Japan have claimed record breakdown voltage combined with low on-resistance for vertical gallium nitride (GaN) p-n diodes fabricated on free-standing GaN substrates [Hiroshi Ohta et al, IEEE Electron Device Letters, published ...
Researchers in Belgium have studied forward gate breakdown of enhancement-mode aluminium gallium nitride/gallium nitride (AlGaN/GaN) high-electron-mobility transistors with p-type GaN gate electrodes [Tian-Li Wu et al, IEEE Electron Device ...
Tags: P-Gan Gate, Electronics
Transformer (HS: 8504) Major Export Countries/Regions from Jan. to Dec. 2014 No. Export Countries/Regions Export Value (Thousand USD) Compared to the Same Period of Last Year ...
Tags: Power Transmission, Transformer
Transformer (HS: 8504) Major Import Countries/Regions from Jan. to Dec. 2014 No. Import Countries/Regions Import Value (Thousand USD) Compared to the Same Period of Last Year ...
Tags: Power Transmission, Transformer
Researchers in China and Hong Kong have claimed the highest output power density and power-added efficiency reported to date for gallium nitride (GaN)-based enhancement-mode metal-insulator-semiconductor high-electron-mobility transistors ...
Tags: GaN MIS-HEMTs, PECVD ALD MOCVD
Peregrine Semiconductor Corp of San Diego, CA, USA - a fabless provider of radio-frequency integrated circuits (RFICs) based on silicon-on-insulator (SOI) - has announced the UltraCMOS 11 platform, the first RF SOI technology built on the ...
Tags: Peregrine CMOS, SOI, RF, UltraCMOS technology, Semiconductor
X-FAB Silicon Foundries AG of Erfurt, Germany - an analog/mixed-signal and micro-electro-mechanical systems (MEMS) foundry - has announced what it claims is the first cost-efficient 180nm silicon-on-insulator (SOI) technology for automotive ...
Tags: X-FAB, SOI, electrical components