Cambridge Electronics Inc (CEI) – which was spun off from Massachusetts Institute of Technology (MIT) in 2012 – has announced a range of gallium nitride (GaN) transistors and power electronic circuits targeted at cutting energy ...
According to the report 'GaN and SiC for power electronics applications' from Yole Développement, in 2014 the silicon carbide (SiC) chip business was worth more than $133m, with power factor correction (PFC) and photovoltaics (PV) ...
Tags: SiC Market, power electronics
II-VI Inc of Saxonburg, PA, USA says that the Advanced Materials Division of its Performance Products Segment in Pine Brook, NJ, which supplies single-crystal silicon carbide (SiC) substrates and CVD-grown polycrystalline diamond materials, ...
Tags: electronics, semiconductor, II-VI, SiC substrates, SiC Wafer
US-based green automobile provider Genovation Cars is on its way to complete the prototype of Corvette named as ‘Genovation Extreme Electric’ or ‘GXE’, the assembly of which will conclude by this month. Drawn from ...
Tags: automobile manufacture, green vehicle, auto parts, GXE
VisIC Technologies Ltd of Rehovot, Israel, a fabless developer of power conversion devices based on gallium nitride (GaN) metail-insulator-semiconductor high-electron-mobility transistors (MISHEMTs) founded in 2010, has unveiled what it ...
Tags: GaN-on-Si, power transistor
With funding of about €3.9m from the German Federal Ministry of Education and Research (BMBF), 12 partners in the German automotive sector, its supply industry and the sciences (led by Infineon Technologies AG of Munich, Germany) are ...
Tokyo-based Mitsubishi Electric Corp says that its traction inverters incorporating all-silicon carbide (SiC) power modules, installed in a 1000 Series urban commuter train operated by Japan's Odakyu Electric Railway Co Ltd, have been ...
Tags: Mitsubishi, Electric's Railcar
Japan's Rohm Co Ltd has started mass production of what it claims is the first silicon carbide (SiC) MOSFET (metal-oxide-semiconductor field-effect transistor) with a trench structure (where the gate is formed on the sidewall of a groove in ...
GaN Systems Inc in Ottawa, Ontario, Canada – a fabless developer of gallium nitride (GaN)-based power switching semiconductors for power conversion and control applications – is claiming that its GS66504B – one of a family ...
Tags: GaN Systems, Power electronics, GaN SiC
At the Power Conversion Intelligent Motion (PCIM) Europe 2015 event in Nurnberg, Germany (19-21 May), president Girvan Patterson of GaN Systems Inc in Ottawa, Ontario, Canada - a fabless developer of gallium nitride (GaN)-based power ...
At PCIM (Power Conversion Intelligent Motion) Europe 2015 in Nuremberg, Germany (19-21 May), silicon carbide (SiC)-based power product maker Cree Inc of Durham, NC, USA — exhibiting with distributor partner MEV Elektronik Service GmbH ...
Tags: Power Conversion, Cree
GaN Systems Inc of Ottawa, Ontario, Canada, a fabless developer of gallium nitride (GaN)-based power switching semiconductors for power conversion and control applications, has launched the latest addition to its range of enhancement-mode ...
Tags: GaN Systems, Power electronics
Panasonic Corp of Osaka, Japan is launching what it claims is the industry's smallest enhancement-mode (E-mode) gallium nitride (GaN) power transistor, encapsulating into an 8x8 dual-flat no-lead (DFN) 'X-GaN' surface-mount package. A ...
Tags: Panasonic, GaN Power Transistor
Cree Inc of Durham, NC, USA, which manufactures silicon carbide (SiC)-based power products, has launched what it claims is the first 900V MOSFET platform. Optimized for high-frequency power electronics applications, including renewable ...
Tags: power products, silicon carbide
Energized by growing demand for power supplies, hybrid and electric vehicles, photovoltaic (PV) inverters and other established applications, the emerging global market for silicon carbide and gallium nitride power semiconductors will grow ...
Tags: GaN SiC Power electronics, power supplies, Electronics