Cree Inc of Durham,NC,USA has launched a 40V,0.25µm,GaN-on-SiC HEMT process die product family,with power and bandwidth capabilities through the Ku-band that enables the replacement of travel-wave tubes with solid-state ...
Tags: Cree, GaN-on-SiC, HEMT, Amplifier
Cree Inc of Durham,NC,USA has announced the qualification and production release of two new gallium nitride(GaN)processes:G40V4(a 0.25µm process with operating drain voltage up to 40V)and G50V3(a 0.4µm process with operating ...
Cree Inc of Durham,NC,USA has announced the sample release of a high-efficiency unmatched gallium nitride(GaN)high-electron-mobility transistor(HEMT)for military and commercial S-band radar applications. Rated at 60W for frequencies of ...
Tags: GaN, HEMT, High-Efficiency, Radar
18 June 2012 RFMD adds 280W GaN matched power transistor family,targeting pulsed-radar RF Micro Devices Inc of Greensboro,NC,USA has launched the RFHA1025,a highly efficient 280W pulsed gallium nitride(GaN)RF matched power transistor ...
Tags: RFMD, GaN, GaN power transistor, the RFHA1025, IMS, semiconductor
In booth 1210 at the 2012 IEEE MTT-S International Microwave Symposium(IMS)in Montreal,Canada(17-22 June),RF Micro Devices Inc of Greensboro,NC,USA is showcasing its broad portfolio of products and technologies for the wireless and wired ...
Raytheon Company of Waltham,MA,USA says that its technology facility in Glenrothes,Scotland,UK has been awarded grant funding by the Technology Strategy Board(TSB,the UK government's national innovation agency)that will be used to support ...
Tags: Raytheon, SiC-on-Silicon, ICs, Energy
In booth 1815 at the 2012 IEEE MTT-S International Microwave Symposium (IMS) in Montreal, Canada (17–22 June), RF front-end component maker and foundry services provider TriQuint Semiconductor Inc of Hillsboro, OR, USA is launching ...
Tags: TriQuint, commercial, Canada
Last month Electronics Weekly revealed a flexible OLED,sponsored by the US Army. The developers,at Arizona State University,have sent us a photo and a specification. The 480x360xRGB 7.4in(81dpi)active matrix OLED is built on a ...
Singapore and Hong Kong researchers have developed a gold-free CMOS-compatible process for nitride semiconductor metal–oxide–semiconductor high-electron-mobility transistors(MOS-HEMTs)[Xinke Liu et ...
Tags: Nitride MOS-HEMTs MOCVD, MOS-HEMTs, AlGaN
Following opening of the competition last Autumn and closing for applications in December,the'Technology Inspired Innovation'competition for collaborative research&development funding in the UK has now resulted in 43 projects being chosen ...
Tags: UK funds, compound semiconductor, Photonics and Electrical Systems
4 June 2012 Cree launches X-band fully matched 50-100W GaN HEMTs for commercial radar and satcoms Cree Inc of Durham,NC,USA has launched high-efficiency X-band,fully matched gallium nitride(GaN)high-electron-mobility transistors(HEMTs)for ...
Tags: Cree Inc, GaN HEMTs, high-efficiency X-band, semiconductor, IEEE
4 June 2012 Cascade launches first fully automatic high-power device measurement probe system Cascade Microtech Inc of Beaverton,OR,USA,which provides equipment for the precision contact,electrical measurement and test of ICs,optical ...
Tags: Cascade Microtech Inc.
The Flexible Display Center(FDC)at Arizona State University recently declared that it has competed developing the massive flexible color organic light emitting display(OLED)prototype based on advanced mixed oxide thin film ...
Massachusetts Institute of Technology (MIT) researchers have found that a post-etch anneal dramatically improves the performance of their self-aligned indium gallium arsenide (InGaAs) quantum-well metal–oxide–semiconductor ...
A little bit of semiconductor magic made a lot of difference to RF power amplifiers,and looks like it will do the same for mains PSUs. That magic is the'two-dimensional electron gas'that forms between layers in certain semiconductor ...
Tags: GaN, semiconductor, RF power amplifiers, GaAs, SiC, PSU, JFET