Researchers in China have improved LED power output and droop behavior in nitride semiconductor light-emitting diodes (LEDs) by including an electron-emitting layer under the active region [Jianbao Zhang et al, Appl. Phys. Express, vol5, ...
Advanced RenewableEnergy Company LLC (ARC Energy) of Nashua, NH, USA, a provider of c-axis sapphire growth technologies and turnkey solutions for the LED solid-state lighting market, has announced 'CHES Foundations Series Part 2: Sapphire ...
Tags: Sapphire
Jianzhong Jiao discusses the progress made in the SEMI organization on LED manufacturing standards, including a Wafer Task Force draft document, that should ultimately lead to more efficient and less expensive components for SSL. With the ...
Tags: LED
This quarter, Plessey Semiconductors plans to sample its GaN-on-Silicon LEDs. Samples are due out in December with production sales beginning in March for both LED die and packaged devices. It is the culmination of a decade of ...
Tags: LED
NGK Insulators Ltd of Nagoya, Japan has developed gallium nitride (GaN) wafers that significantly reduce defects and approximately double the luminous efficiency of green light-emitting diodes (LEDs) over previous models. The GaN wafers ...
Soraa Inc of Fremont,CA,USA,which develops solid-state lighting technology built on'GaN on GaN'(gallium nitride on gallium nitride)substrates,says that as of 1 November 2012 its full-spectrum GaN-on-GaN LED MR16 lamps ,China,South ...
Tags: LED MR16 lamp, GaN on GaN substrates, USA, Soraa Inc.
Singapore researchers report "for the first time" the DC and microwave characteristics of submicron-gate aluminium gallium nitride on gallium nitride (AlGaN/GaN) high-electron-mobility transistors (HEMTs) on 8-inch (200mm) diameter Si(111) ...
Tags: MOCVD
IDG News Service-SAP now says it will proceed with two major user conferences set for Madrid next month,after saying earlier this week that it was weighing its options following concerns over labor strikes planned for the same time as the ...
Tags: SAP, user conferences, labor strikes
Researchers in Korea and India have used zinc oxide (ZnO) nanorods on the rear side tolight-emitting diodes (LEDs) grown on c-plane sapphire [Joo Jin et al, Jpn. J. Appl. Phys., vol51, p102101, 2012]. The researchers were based at Chonbuk ...
Tags: LED
Urbis Sapphire lanterns are to be used in modernisation project Following a decision by cabinet members yesterday, streetlights in Powys are to be switched back on. Powys county council has been allocated £1.4 million to modernise ...
18 October 2012 Lithium aluminate substrate for low-cost nonpolar gallium nitride Researchers based in Germany and the Netherlands have been studying the potential for growing nonpolar gallium nitride(GaN)on lithium ...
Strategies United predicts that by 2015 the global market for high brightness LEDs (HB-LEDs) will generate revenues of $18.9 billion, representing a compound growth rate of 11.8%. A key factor in the growth of HB-LEDs is the use of ...
Tags: LED
ARC Energy's CHES furnaces enable Suzhou Hyperion Geocrystal to enter volume production of sapphire cores and wafers, for high-brightness LEDs, ranging from 2-8 mm in diameter. Larger wafers are one avenue toward lower-cost LEDs and a ...
Epistar, Taiwan's largest manufacturer of packaged LEDs has decided to trial silicon-based wafers. The company is hoping to take advantage of cost savings in the backend of the LED manufacturing process to in turn broaden SSL deployment. ...
Epistar hints at'game-changing'silicon LED switch 12 Oct 2012 Giant Taiwanese LED maker works with GaN-on-silicon specialist Azzurro on technology with potential to cut cost of solid-state lighting. Plessey's GaN-on-silicon LED ...
Tags: LED, Taiwan, technology, manufacture