Ascent Solar Technologies Inc of Thornton,CO,USA,which manufactures thin-film photovoltaic modules based on copper indium gallium diselenide(CIGS)using flexible substrate materials,has been selected to provide building-integrated ...
Researchers in Korea have been studying how to improve graphene transparent conducting layers(TCLs)using gold nanoparticle(Au-NP)decoration.The team was variously associated with Gwangju Institute of Science and Technology,Korea Basic ...
Infinera Corp of Sunnyvale,CA,USA,a vertically integrated manufacturer of digital optical network systems incorporating its own indium phosphide-based photonic integrated circuits(PICs),is showcasing its DTN-X platform(claimed to be the ...
For second-quarter 2012,AXT Inc of Fremont,CA,USA has reported revenue of$25.2m,up 7%on$23.5m last quarter but down 16%on$30m a year ago. Fiscal Q2/2011 Q3/2011 Q4/2011 Q1/2012 Q2/2012 Quarterly revenue$30.0m $28.3m$21.2m$23.5m$25.2m ...
Tags: AXT Inc, secondQuarter 2012, GaAs Growth of 22 percent
Silicon nitride protection for graphene electrodes in UV-LEDs Korea University, US Naval Research Laboratory and University of Florida have improved the reliability of graphene electrodes in ultraviolet light-emitting diodes (UV-LEDs) ...
AIXTRON SE today announced a new MOCVD system order from Finisar Corporation,USA,a market leader in high-speed optical data communications.The order is for one AIX 2800G4-TM automated reactor dedicated to the growth of indium phosphide ...
Tags: AIXTRON G4, Order, Finisar
Latest issue of Semiconductor Today now available For coverage of all the key business and technology developments in compound semiconductors and advanced silicon materials and devices over the last month,subscribe to Semiconductor ...
Tags: Issue, Semiconductor, Lights
Finisar orders another Aixtron G4 MOCVD system for InP lasers and detectors Deposition equipment maker Aixtron SE of Herzogenrath,Germany says that it has received a repeat order for an AIX 2800G4-TM automated metal-organic chemical ...
Physicists at The University of Texas at Austin,in collaboration with colleagues at Taiwan's National Tsing-Hua University and National Chiao-Tung University and at the Beijing National Laboratory for Condensed Matter Physics and Institute ...
Backlog at Electro Scientific Industries swells to a six-year high on new design wins,prompting 20%stock bounce. ESI stock:up 20%on positive outlook Electro Scientific Industries(ESI),the provider of laser systems used in a variety ...
Tags: ESI, Laser, semiconductor, consumer electronics, LED
RF Micro Devices Inc of Greensboro,NC,USA has launched a new single-stage indium gallium phosphide heterojunction bipolar transistor(InGaP HBT)power amplifier(PA)operating at frequencies of 50-2700MHz,designed specifically for wireless ...
Tags: RFMD, InGaP HBT, power amplifier, wireless infrastructure
Infinera reports Q2 revenue down 10.7%on last quarter For second-quarter 2012,Infinera Corp of Sunnyvale,CA,USA,a vertically integrated manufacturer of digital optical network systems incorporating its own indium phosphide-based photonic ...
Tags: Infinera, digital optical network systems, revenue report, PICs, DTN-X
Ocean Optics of Dunedin,FL,USA has added another option to its small-footprint near-infrared spectrometer line with the NIRQuest512-1.9,a high-resolution device with response from 1100nm to 1900nm suiting applications including ...
Tags: Ocean Optics, Near-infrared spectrometer, Wavelength Range
Global Solar Energy Inc of Tucson,AZ,USA,which makes flexible copper indium gallium diselenide(CIGS)thin-film photovoltaic cells and modules,has announced an expansion into Japan's growing solar market,establishing local partnerships and ...
Tags: Global Solar Energy Inc, CIGS thinFilm photovoltaic cells and modules
University of Massachusetts Lowell, Universidad de Salamanca, and North Carolina State University have integrated aluminium oxide dielectric into III-V ballistic deflection transistors (BDTs) for the first time [Vikas Kaushal et al, IEEE ...
Tags: Aluminium Oxide, Ballistic Deflection, Improved Transconductance