Transphorm Inc of Goleta, near Santa Barbara, CA, USA (which designs and delivers power conversion devices and modules) has launched the Total GaN family of gallium nitride on silicon transistors and diodes, establishing what is claimed to ...
Tags: Transphorm, power devices, GaN device
The 11.8m Euro pan-European project NEWLED (‘Nanostructured Efficient White LEDs based on short-period superlattices and quantum dots’) is aiming to develop a new generation of 50-60% energy-efficient white light-emitting LED ...
Tags: LED lighting, LEDlighting
Singapore will allow US officials to inspect the work of a research institute linked to a Chinese telecoms firm which Washington suspects of espionage, the foreign ministry said on Thursday. K. Shanmugam, the foreign minister, told ...
Tags: Singapore, Huawei, telecoms firm
At the SEMICON China show in Shanghai next week (19-21 March), Shanghai-based dielectric and through-silicon via (TSV) etch tool supplier Advanced Micro-Fabrication Equipment Inc (AMEC) is making its solid-state lighting (SSL) market debut ...
Tags: MOCVD, Electrical, Electronics
Is it time for high-brightness LED manufacturing to get serious about process control? If so, what lessons can be learned from traditional, silicon-based integrated circuit manufacturing? The answer to the first question can be ...
Tags: LED manufacturing, LED substrate, MOCVD
In conjunction with the 2013 Government Microcircuit Applications and Critical Technology conference (GOMACTech 13) in Las Vegas (11-14 March), RF front-end component maker and foundry services provider TriQuint Semiconductor Inc of ...
Tags: TriQuint, GaN Ku-Band PA, Broadband Integrated Limiter/LNA
Deposition equipment maker Aixtron SE of Herzogenrath, Germany says that Transphorm Inc of Goleta, near Santa Barbara, CA, USA (which designs and delivers power conversion devices and modules) is stepping up production of gallium nitride on ...
Tags: Aixtron SE, Herzogenrath, AIX G5+GaN-on-Si System, Transphorm
South Korea's Hongik University has developed a nitride semiconductor device on silicon with an embedded Schottky barrier diode (SBD) [Bong-Ryeol Park et al, Appl. Phys. Express, vol6, p031001, 2013]. The device was designed as a ...
Tags: Diode, semiconductor device, semiconductor
South Korea's Hongik University has developed a nitride semiconductor device on silicon with an embedded Schottky barrier diode (SBD) [Bong-Ryeol Park et al, Appl. Phys. Express, vol6, p031001, 2013]. The device was designed as a ...
Tags: Diode, semiconductor device, semiconductor
Researchers in Japan and Switzerland have used a laser treatment of sapphire substrates to increase the thickness of gallium nitride (GaN) layers grown by hydride vapor phase epitaxy (HVPE) to around 200μm [Hideo Aida et al, Appl. Phys. ...
Researchers in China and Canada have developed air-bridge field plates for nitride semiconductor high-electron-mobility transistors (HEMTs) that increase the breakdown voltage and offer more stable performance at raised temperatures [Xie ...
AIXTRON SE has been awarded the 2013 Compound Semiconductor Manufacturing Award for its latest development, the AIX G5+ reactor for gallium nitride on silicon (GaN-on-Si). The Award recognizes key areas of innovation surrounding the chip ...
Power semiconductor device maker International Rectifier Corp (IR) of El Segundo, CA, USA is to showcase its latest power management solutions at the Applied Power Electronics Conference and Exposition (APEC 2013) at Long Beach Convention ...
Following its proof-of-concept achievement in late 2012, BluGlass Ltd of Silverwater, Australia says that it has produced p-type gallium nitride (GaN) films with industry-equivalent electrical properties using its proprietary ...
Tags: LED device, LED structure, LED
Transphorm Inc of Goleta, near Santa Barbara, CA, USA (which designs and delivers power conversion devices and modules) says that its novel 600V gallium nitride (GaN) module has enabled the first GaN-based high power converter. Transphorm ...