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Field plates
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Reducing Current Leakage in Aluminium Gallium Nitride Transistors on Silicon
Nov 27, 2015Researchers in the USA have reduced current leakage for aluminium gallium nitride (AlGaN) high-electron-mobility transistors (HEMTs) on silicon to the level achieved for devices produced on much more expensive silicon carbide [Bo Song et ...
Tags: AlGaN, transistors, Silicon
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Researchers in USA Develops Vertical Schottky and Pn GaN Diodes on Silicon
Jul 27, 2015Researchers in the USA have developed vertical Schottky and pn gallium nitride (GaN) diodes on silicon with performance comparable to devices grown on much more expensive substrates [Yuhao Zhang et al, IEEE Transactions On Electron Devices, ...
Tags: electronics, semiconductor
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Researchers Claimed Record High Breakdown Voltage for Aluminium Gallium Nitride
Mar 26, 2015Researchers at University of Notre Dame (UND) in the USA have claimed record high breakdown voltage for aluminium gallium nitride (AlGaN/GaN) lateral Schottky barrier diodes (SBDs) on silicon [Mingda Zhu et al, IEEE Electron Device Letters, ...
Tags: silicon diodes, GaN substrates
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NAIST Has Claimed The Highest Breakdown Voltage to Date for a Diamond MESFET
Oct 28, 2014Japan’s National Institute of Advanced Industrial Science and Technology (NAIST) has claimed the highest breakdown voltage to date for a diamond metal-semiconductor field-effect transistor (MESFET) [Hitoshi Umezawa et al, IEEE ...
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High-Frequency Performance of Gallium Nitride Gan Has Been Reported in Singapore
Sep 5, 2014Researchers in Singapore have reported high-frequency performance of gallium nitride (GaN) indium aluminium nitride (InAlN) high-electron-mobility transistors (HEMTs) on silicon substrates, including the first noise measurements [S. ...
Tags: Electrical, Electronics
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Higher Breakdown Voltage for FP GaN HEMTs Over Convention Field-Plate Designs
Sep 3, 2014Researchers in Japan and USA have claimed the first experimental demonstration of higher breakdown voltage for slant field-plate (FP) gallium nitride (GaN) high-electron-mobility transistors (HEMTs) over convention field-plate designs ...
Tags: GaN, HEMTs, Electronics
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MIT Has Demonstrated GaN Vertical Schottky and P-N Diodes
May 7, 2014Massachusetts Institute of Technology (MIT) has demonstrated gallium nitride (GaN) vertical Schottky and p-n diodes on silicon Si substrates “for the first time” [Yuhao Zhang et al, IEEE Electron Device Letters, published online ...
Tags: GaN, MOCVD, Gallium Nitride Diodes
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Xidian University Has Produced 'Normally-off' GaN HEMTs
Nov 12, 2013China’s Xidian University has produced ‘normally-off’ gallium nitride (GaN) high-electron-mobility transistors (HEMTs) with a thin high-aluminium-content aluminium gallium nitride (AlGaN) barrier layer [Kai Zhang et al, ...
Tags: Xidian University, normally-off, GaN, HEMTs
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SINANO Extended Its Work on Double-Gated DG-HEMTs
Jun 8, 2013Chinese Academy of Sciences’ Suzhou Institute of Nano-Tech and Nano-Bionics (SINANO) has extended its work on double-gated nitride semiconductor high-electron-mobility transistors (DG-HEMTs) [Guohao Yu et al, IEEE Electron Device ...
Tags: Nitride HEMTs, Electrical
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BAE Systems and Purdue University Developed Atomic Layer Deposited (ALD) Aluminium Oxide
May 13, 2013Researchers in the USA at BAE Systems and Purdue University have developed atomic layer deposited (ALD) aluminium oxide as passivation for nitride semiconductor high-electron-mobility transistors (HEMTs) [Dong Xu et al, Electron Device ...
Tags: Oxide Passivation, Electronics, Atomic Layer
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Field Plates Are Used to Manipulate Electric Field Distributions in HEMTs
Mar 7, 2013Researchers in China and Canada have developed air-bridge field plates for nitride semiconductor high-electron-mobility transistors (HEMTs) that increase the breakdown voltage and offer more stable performance at raised temperatures [Xie ...
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Researchers Have Developed Gallium Nitride (GaN) Fin Field-Effect Transistors (FinFETs)
Feb 21, 2013Researchers based in South Korea and France have developed gallium nitride (GaN) fin field-effect transistors (FinFETs) with the lowest claimed subthreshold swing for nitride semiconductor metal-insulator-semiconductor FETs (MISFETs) ...
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SINANO Has Been Using Double-Gated Nitride Semiconductor HEMTs
Feb 6, 2013Suzhou Institute of Nano-tech and Nano-bionics (SINANO) in China has been using double-gated nitride semiconductor high-electron-mobility transistors (HEMTs) to understand the effects of field-plates in improving dynamic performance [Guohao ...
Tags: SINANO, China, double-gated nitride semiconductor, HEMTs
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Pulsed Measurement to Assess Current-Collapse/Gate-Lag Effects Showed Little Dispersion
Aug 22, 2012Researchers in Switzerland and the USA have reported the first large-signal performance for a gallium nitride on silicon(GaN-on-Si)high-electron-mobility transistors with output power density of 2W/mm and associated peak power-added ...
Tags: GaN/Si, HEMTs, high-electron-mobility transistors, frequency performance
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