IAR Embedded Workbench and the new S32K MCUs will offer developers new possibilities to meet increasing demands for high performance and functional safety in the automotive market. IAR Systems announces extensive development tools support ...
Tags: IAR Systems, Freescale S32K
Microsanj LLC of Santa Clara, CA, USA - a supplier of high-resolution, thermoreflectance imaging analysis (TIA) c, tools and consulting services - participated in three conferences during Microwave Week in Phoenix, Arizona. At the 2015 ...
Tags: TIA system, thermal imaging system
At the IEEE MTT-S International Microwave Symposium (IMS 2015) in Phoenix, AZ (19-21 May), M/A-COM Technology Solutions Inc of Lowell, MA, USA (which makes semiconductors, components and subassemblies for analog RF, microwave, ...
Tags: Power Transistor, Linear Operation
Qorvo Inc, a provider of core technologies and RF solutions for mobile, infrastructure and aerospace/defense applications, has launched a family of gallium nitride (GaN) power amplifiers (PAs) that are said to dramatically improve the ...
Qorvo Inc of Greensboro, NC and Hillsboro, OR, USA, a provider of RF solutions for mobile, infrastructure and aerospace/defense applications, has launched a family of hybrid gallium nitride (GaN)/gallium arsenide (GaAs) power amplifiers ...
Tags: Power Amplifier, Qorvo
RF power transistors supplier Freescale Semiconductor of Austin, TX, USA has launched two ultra-wideband RF power gallium nitride (GaN) transistors in new plastic packages. "The industry-leading bandwidth of these two products will enable ...
Tags: GaN Transistors, Plastic Packages
Diamond Microwave Devices Ltd of Leeds, UK (which was spun out in 2006 from the diamond electronics team of Element Six and specializes in high-performance microwave power amplifiers) has re-designed its range of gallium nitride (GaN)-based ...
North Carolina State University in the USA has developed a new edge termination technique for 4H polytype silicon carbide (4H-SiC) high-voltage devices [Woongje Sung et al, IEEE Electron Device Letters, published online 29 April 2015]. The ...
Cree Inc of Durham, NC, USA has launched two gallium nitride (GaN) high-electron-mobility transistor (HEMT) RF devices that are said to solve a number of long-standing issues for radar systems employing traditional travelling wave tube ...
Tags: GaN HEMTs, TWT Amplifiers
In booth #1348 at the 2015 IEEE MTT-S International Microwave Symposium & Exhibition (IMS 2015) in Phoenix, Arizona (17-22 May), Microsemi Corp of Aliso Viejo, CA, USA (which designs and makes analog and RF devices, mixed-signal integrated ...
Tags: Microsemi, Microwave Devices
M/A-COM Technology Solutions Inc of Lowell, MA, USA (which makes semiconductors, components and subassemblies for analog RF, microwave, millimeter-wave and photonic applications) has launched its fourth generation of gallium nitride on ...
Tags: GaN Technology, silicon carbide
Korea Institute of Science and Technology has presented what it says is the first demonstration of indium gallium arsenide on-insulator (In0.53Ga0.47As-OI) transistors with a buried yttrium oxide (Y2O3 BOX) layer [SangHyeon Kim et al, IEEE ...
Researchers at University of Notre Dame (UND) in the USA have claimed record high breakdown voltage for aluminium gallium nitride (AlGaN/GaN) lateral Schottky barrier diodes (SBDs) on silicon [Mingda Zhu et al, IEEE Electron Device Letters, ...
Tags: silicon diodes, GaN substrates
NeoPhotonics Corp of San Jose, CA, a vertically integrated designer and manufacturer of both indium phosphide (InP) and silica-on-silicon photonic integrated circuit (PIC)-based modules and subsystems for high-speed communications networks, ...
Tags: NeoPhotonics, transceiver
InnoLight Technology Corp of Suzhou, China, which designs and makes optical transceivers for the cloud computing market, has released its full family of 100G QSFP28 and 100G CFP4 transceivers. As data-center traffic is expected to triple ...
Tags: optical transceivers, cloud computing market, transceivers