Back in 1960 Electronics Weekly was born into a ferment of III-V semiconductor research that within two years would produce the first practical LED. In 1960 Dr Nick Holonyak of General Electric was developing an unusual material,GaAsP,as ...
Tags: General Electric, LED history, USA
Speech by the Governor Shaanxi is the important cradle of Chinese civilization. It was the seat of capitals of 13 ancient dynasties including Zhou, Qin, Han and Tang dynasty and also was China's political, economic and cultural center for ...
Tags: Shananxi, business, introduction to Shananxi, Shananxi economy, survey
Researchers from Japan and the USA have reported the first fabrication on hydride vapor phase epitaxy (HVPE) aluminium nitride (AlN) substrates of aluminium gallium nitride (AlGaN) light-emitting diodes (LEDs) that emit at the ...
Tags: DUV, LEDs, AlGaN, AlN substrates, HVPE, light-emitting diodes
18 October 2012 Lithium aluminate substrate for low-cost nonpolar gallium nitride Researchers based in Germany and the Netherlands have been studying the potential for growing nonpolar gallium nitride(GaN)on lithium ...
Taiwan researchers have achieved a reduction in luminous efficiency droop from 42%to 7%by inserting p-type indium gallium nitride(p-InGaN)between the active light-emitting and electron-blocking layers of a nitride semiconductor ...
Prudential is seriously contemplating to wash its hand from its UK life annuity business as its operation in the UK is not fetching sumptuous profit. The same move has been termed as a "disaster", by its chief executive officer Tidjane ...
Tags: UK Arm, Prudential, annuity business, sumptuous profit
Philips provides OLED outlook at The LED Show 31 Jul 2012 At The LED Show pre-conference workshop,Philips Lighting highlighted the similarities and differences between LEDs and OLEDs.The presentation also emphasized methods by which OLED ...
US-based researchers have reported record external quantum efficiencies(EQE)of 10.4%for deep ultraviolet light-emitting diodes(DUV-LEDs)emitting at a wavelength of 278nm at a continuous-wave current of 20mA[Max Shatalov et ...
Researchers in Nanjing,China have reported the first fabrication and characterization at high temperature of high-performance solar-blind photodetectors(PDs)based on an aluminium gallium nitride(AlGaN)absorption layer and planar ...
Tags: High-Temperature, PD, MSM, Solar
Researchers at Ukraine's Lashkaryov Institute of Semiconductor Physics have been studying current crowding and electrical efficiency degradation in vertical indium gallium nitride(InGaN)light-emitting diodes(LEDs)made from material grown on ...
Tags: Vertical InGaN/SiC LEDs, SiC substrates, massive heat sink
In a brand-new factory here, Eric Kim, chief executive of Soraa Inc., cradles a palm-size light that he refers to as “LED 2.0.” The light has a circular snowflakelike cooling frame surrounding a lens that emits a bright white ...
Tags: new technology
In a brand-new factory here, Eric Kim, chief executive of Soraa Inc., cradles a palm-size light that he refers to as “LED 2.0.” The light has a circular snowflakelike cooling frame surrounding a lens that emits a bright white ...
Tags: Market View, new technology