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EQE
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Reducing Misfit Dislocations in Green Semi-Polar Light-Emitting Diodes
Aug 26, 2016University of California Santa Barbara (UCSB) in the USA has used limited-area epitaxy (LAE) on semi-polar gallium nitride (GaN) substrates to reduce misfit dislocation (MD) densities in multiple quantum well (MQW) green light-emitting ...
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Silicon Dioxide Charge Inverter Boosts Hole Injection in IngaN LEDs
Apr 21, 2016Researchers based in China, Singapore and Turkey have used an extremely thin layer of silicon dioxide (SiO2) insulator as a charge inverter in indium gallium nitride (InGaN) light-emitting diodes (LEDs), improving light output power and ...
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Demonstration of Novel High-Efficiency Blue LEDs on Silicon Substrates
Apr 6, 2016Shigeya Kimura, Hisashi Yoshida, Toshihide Ito, Aoi Okada, Kenjiro Uesugi and Shinya Nunoue Metal organic chemical vapor deposition is used to grow aluminum gallium nitride interlayers within indium gallium nitride/gallium nitride ...
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Indium Gallium Nitride Barriers Enhance LED Power And Efficiency
Mar 15, 2016South China University of Technology has shown improved power and efficiency performance for indium gallium nitride (InGaN) light-emitting diodes (LEDs) with 1.2% indium-content multiple-quantum-well (MQW) barriers [Zhiting Lin et al, J. ...
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Tantalum Barrier Reduces Gallium Phosphide Contact Resistance
Mar 9, 2016Korea University has been working to improve metal contacts on aluminium gallium indium phosphide (AlGaInP) light-emitting diodes (LEDs) [Dae-Hyun Kim et al, Jpn. J. Appl. Phys., vol55, p032102, 2016]. In particular, the research team added ...
Tags: AlGalnP, Tantalum barrier, LED
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Hybrid Growth of Gallium Nitride Tunnel Junctions
Feb 14, 2016University of California Santa Barbara (UCSB) in the USA has been developing a hybrid technique to create III-nitride tunnel junctions (TJs) using a combination of metal-organic chemical vapor deposition (MOCVD) and molecular beam epitaxy ...
Tags: Gallium Nitride Tunnel, Hybrid
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Ultraviolet Photodetectors on Free-Standing Gallium Nitride
Dec 2, 2015Researchers based in USA have been studying performance improvements in aluminium gallium nitride (AlGaN) ultraviolet (UV) avalanche photodiodes (APDs) gained from using free-standing gallium nitride substrates instead of gallium nitride on ...
Tags: AlGaN, Ultraviolet photodetectors, HVPE
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Gallium Nitride Phosphide Absorber for Silicon-Based Solar Power
Oct 30, 2015Researchers in the USA have been working on gallium nitride phosphide (GaNP) as an absorbing material for solar power [S. Sukrittanon et al, Appl. Phys. Lett., vol107, p153901, 2015]. The aim of the team from University of California San ...
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KTH-Royal Institute Create Heterojunctions Consisting of N-InP and P-Type Silicon
Jun 16, 2015KTH-Royal Institute of Technology in Sweden has used corrugated epitaxial lateral overgrowth (CELOG) to create heterojunctions consisting of n-type indium phosphide (n-InP) and p-type silicon (p-Si) [Y. T. Sun et al, Appl. Phys. Lett., ...
Tags: corrugated epitaxial, silicon
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Deep Ultraviolet Light-Emitting Diodes
Apr 28, 2015Researchers in Korea and USA have developed sidewall emission-enhanced (SEE) deep ultraviolet (DUV) light-emitting diodes (LEDs) to improve light extraction efficiency DUV LEDs with wavelengths less than 300nm become very inefficient due ...
Tags: Light-Emitting Diodes, LEDs
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265nm-Wavelength LEDs Is More Powerful and Efficient
Apr 22, 2015Researchers based in Japan claim the highest output power and external quantum efficiency (EQE) so far for deep ultraviolet (DUV) sub-270nm-wavelength light-emitting diodes (LEDs) during DC operation [Shin-ichiro Inoue et al, Appl. Phys. ...
Tags: DUV LEDs, DUV devices
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UCLA Developed Gallium Antimonide Thermophotovoltaic Cells
Apr 7, 2015University of California Los Angeles (UCLA) has developed gallium antimonide (GaSb) thermophotovoltaic (TPV) cells on gallium arsenide (GaAs) substrates [Bor-Chau Juang et al, Appl. Phys. Lett., vol106, p111101, 2015]. The use of GaAs ...
Tags: TPV devices, lattice mismatch, Electronics
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Zhejiang University Jointly Developed UV-LEDs Based on Schottky Junctions
Mar 5, 2015Zhejiang University in China and University of Cambridge in the UK have jointly developed ultraviolet light-emitting diodes (UV-LEDs) based on metal-semiconductor Schottky junctions between silver nanowires (AgNWs) and gallium nitride (GaN) ...
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SETi Doubles Efficiency and Ships Samples
Feb 11, 2015Sensor Electronic Technology Inc (SETi) of Columbia, SC, USA, which develops and manufactures deep-ultraviolet (DUV) LED devices and modules, has started shipping samples of its UVC LEDs with 2.5mW of optical power at 265–280nm. First ...
Tags: UVC LEDs, Sensor Electronic
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Spin-Coating of Silver Nanowires as Transparent Electrode for InGaN LEDs
Feb 10, 2015Researchers in Korea have used spin-coated silver nanowires (Ag NWs) to improve the performance of indium gallium nitride light-emitting diodes (InGaN LEDs) [Gyu-Jae Jeong et al, Appl. Phys. Lett., vol106, p031118, 2015]. The team based at ...
Tags: Spin-Coating, InGaN LEDs
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