Suzhou Institute of Nano-tech and Nano-bionics (SINANO) in China has been using double-gated nitride semiconductor high-electron-mobility transistors (HEMTs) to understand the effects of field-plates in improving dynamic performance [Guohao ...
Tags: SINANO, China, double-gated nitride semiconductor, HEMTs
With the target of drawing academic and industrial expertise together to address the solid-state lighting/electronics interface and its implications for custom-controlled lighting systems, Scotland’s University of Strathclyde is ...
Tags: ILC, Li-Fi technology, LED array, LEDs
Researchers in Korea have used aluminium gallium nitride (AlGaN) heterostructures similar to high-electron-mobility transistors (HEMTs) to create Schottky barrier diodes (SBDs) with increased forward current without damaging the breakdown ...
Tags: aluminium gallium nitride, AlGaN, heterostructures, HEMTs
Researchers in the USA have developed radio frequency switches based on nitride semiconductor voltage-controlled capacitors (varactors) [F. Jahan et al, IEEE Electron Device Letters, 9 January 2013]. The team, consisting of engineers from ...
Tags: radio frequency switches, nitride semiconductor voltage, SET
Following six years of R&D, Raytheon has opened a silicon carbide fab in Glenrothes Scotland which will offer foundry services as well as its own line of high-temperature ICs. Its SiC process has been developed on-site, with Government ...
Tags: Raytheon, silicon carbide fab, IC
NTT Basic Research Laboratories in Japan has used hexagonal boron nitride (h-BN) layers to release nitride semiconductor light-emitting diodes (LEDs) from sapphire and transfer them to commercially available adhesive tape [Toshiki Makimoto ...
Tags: LED
A group of lighting designers and manufacturers, researchers, and utilities have joined to ask the EPA to recognize that higher-CRI lamps can increase energy savings through broader usage even with a slightly reduced efficacy specification. ...
Tags: Lighting Coalition, EPA, High CRI Lamps
Power semiconductor device maker International Rectifier Corp (IR) of El Segundo, CA, USA has announced that co-founder Eric Lidow passed away on 18 January. Born in Vilnius, Lithuania (then part of Russia) over 100 years ago in 1912, ...
Tags: Power semiconductor device, Eric Lidow, Electrical, Electronics Engineers
Taiwan researchers have used a self-textured oxide mask (STOM) as a template to enhance the external quantum efficiency (EQE) of nitride 380nm ultraviolet (UV) light-emitting diodes (LEDs) by up to 83% [Kun-Ching Shen et al, IEEE Electron ...
Tags: LED light, LED, LED light extraction
Seoul National University and Korea Electronics Technology Institute have been developing hafnium dioxide (HfO2) as a gate insulator for aluminium gallium nitride (AlGaN) metal-oxide-semiconductor high-electron-mobility transistors ...
Tags: HfO2, gate insulator, Lights, Lighting
South Korean LED maker Seoul Semiconductor Co Ltd says that Verbatim is to launch a new range of LED-based products that are built around Seoul Semiconductor’s patented nPola technology. nPola minimizes defects in the LED chip’s ...
Verbatim will launch a new range of LED products based on Seoul Semiconductor (SSC)’s ”nPola” technology. Since 2010, Verbatim has been introducing a growing portfolio of high performance LED lamps to the lighting ...
Tags: LED Chip, LED, LED lamps, LED products
AIXTRON SE announced that China’s Focus Lightings Tech Inc. has ordered a number of CRIUS II-L systems for mass production of gallium nitride (GaN) light emitting diode (LED) epitaxial wafers. The systems will be configured to handle ...
Tags: Focus Lightings, Lighting, LED
Deposition equipment maker Aixtron SE of Herzogenrath, Germany says that in Q4/2012 China’s Focus Lightings Tech Inc ordered multiple CRIUS II-L systems for the mass production of gallium nitride (GaN) light emitting diode (LED) ...
Tags: Lightings Orders, LEDs, Focus Lightings Tech
Taiwan’s National Chung Hsing University has used nitride semiconductor growth on gallium nitride nanocolumns and nanoporosity achieved with photoelectrochemical etching to boost the light output power of light-emitting diodes (LEDs) ...
Tags: LEDs, Air-Channels, Nanoporous Structure