University of Glasgow and University of Cambridge in the UK have claimed the highest frequency performance to date for gallium nitride (GaN) high-electron-mobility transistors (HEMTs) on low-resistivity (LR) silicon (Si) [A. Eblabla et al, ...
The biggest ever Intertextile Shanghai Home Textiles – Autumn Edition, opens next week and will run from August 26-28, 2015 featuring over 1,400 exhibitors from 30 countries and regions. The fair has expanded and now also includes ...
A multi-disciplinary research team led by Young Hee Lee, director of South Korea's Institute for Basic Science (IBS) Center for Integrated Nanostructure Physics at Sungkyunkwan University (SKKU), has devised a fabrication method for the ...
Tags: semiconductor, electronic products, transition-metal dichalcogenide
Researchers in the USA and Korea have developed a hydrogen high pressure annealing (HPA) process for aluminium oxide/hafnium dioxide (Al2O3/HfO2) gate stacks on indium gallium arsenide (InGaAs) quantum wells [Tae-Woo Kim et al, IEEE ...
Tags: Transistors, capacitors
Researchers from Baker IDI Heart and Diabetes Institute and Deakin University in Melbourne, have performed a study to assess the effect of dairy fat and soy oil on circulating postprandial lipids in men (Meikle et al., 2015). The study was ...
McGill University in Canada has developed light-emitting diodes based on aluminium indium gallium nitride (AlInGaN) nanowires on silicon with spontaneous core-shell structures that inhibit non-radiative surface recombination, improving ...
Researchers in the USA have developed vertical Schottky and pn gallium nitride (GaN) diodes on silicon with performance comparable to devices grown on much more expensive substrates [Yuhao Zhang et al, IEEE Transactions On Electron Devices, ...
Tags: electronics, semiconductor
The US Department of Energy's Oak Ridge National Laboratory (ORNL) has for the first time, it is claimed, combined a novel synthesis process with commercial electron-beam lithography techniques to produce arrays of semiconductor junctions ...
Tags: electronics, semiconductor, Heterojunctions
Eindhoven University of Technology (Technische Universiteit Eindhoven, or TU/e) and FOM Foundation have presented a prototype of a solar cell that produces fuel rather than electricity (Anthony Standing et al., 'Efficient water reduction ...
The National Renewable Energy Laboratory (NREL) and University of California Santa Barbara in the USA have developed a wafer bonding technology for III-V materials and silicon (Si) using transparent conductive oxide (TCO) interlayers of ...
Tags: electronic components, semiconductor, TCO IZO Tandem solar cells
University of Oklahoma in the USA has developed interband cascade (IC) lasers on indium arsenide (InAs) substrates with low threshold and high-current operation [Lu Li et al, Appl. Phys. Lett., vol106, p251102, 2015]. The researchers claim ...
University of Oklahoma in the USA has developed interband cascade (IC) lasers on indium arsenide (InAs) substrates with low threshold and high-current operation [Lu Li et al, Appl. Phys. Lett., vol106, p251102, 2015]. The researchers claim ...
Researchers in China and Hong Kong have claimed the highest output power density and power-added efficiency reported to date for gallium nitride (GaN)-based enhancement-mode metal-insulator-semiconductor high-electron-mobility transistors ...
Tags: GaN MIS-HEMTs, PECVD ALD MOCVD
Japan's Toyoda Gosei Co Ltd has developed vertical gallium nitride (GaN) Schottky barrier diodes (SBDs) capable of handling 50A forward current with 790V reverse blocking [Nariaka Tanaka et al, Appl. Phys. Express, vol8, p071001, 2014]. "To ...
Tags: Vertical Schottky barrier, power supply, diodes Free standing
For its huge and invaluable contribution to the Indian economy, Duke Fashions (India), a premium lifestyle brand has been awarded with ‘ET Business Knights’ award. Delighted on receiving the award, Komal Kumar Jain, chairman ...
Tags: Duke Fashions, textile fashion, garment, apparel and clothing