Singapore's Nanyang Technological University has developed conventional aluminium gallium nitride (AlGaN) high-electron-mobility transistors (HEMTs) with record-breaking figures-of-merit (FOMs) for frequency and breakdown performance [Kumud ...
Tags: Electrical, Electronics
Fangliang Gao and Guoqiang Li of South China University of Technology have developed a technique to grow high-quality indium gallium arsenide (InGaAs) on gallium arsenide substrates using an ultrathin amorphous buffer [Appl. Phys. Lett., ...
Sun Yat-sen University in China has improved the wall-plug efficiency of indium gallium nitride (InGaN) light-emitting diodes (LEDs) grown on silicon by incorporating a distributed Bragg reflector (DBR) [Yibin Yang et al, Appl. Phys. ...
Tags: InGaN LEDs, Silicon, semiconductor
Hong Kong University of Science and Technology (HKUST) is developing techniques to monolithically integrate high-electron-mobility transistors (HEMTs) and light-emitting diodes (LEDs) based on aluminium indium gallium nitride (AlInGaN) ...
Tags: Nitride Semiconductor, LEDs, LED regions
Research into the emerging field of quantum computing will be carried out at the Institute for Interdisciplinary Information Sciences (IIIS) at Tsinghua University in Beijing using recently purchased plasma systems from UK-based etch and ...
Tags: OIPT, Electrical, Electronics
Lund University has developed multi-gate (MuG) III-V metal-oxide-semiconductor field-effect transistors (MOSFETs) with a cut-off frequency of 210GHz and a maximum oscillation frequency of 250GHz, “the highest of any reported ...
Tags: effect transistors, fins, plasma, Electrical&Electronics
Institute of Electronic, Microelectronic and Nanotechnology (IEMN) in France and EpiGaN nv in Belgium have claimed a record combination of specific on-resistance and breakdown voltage for a double heterostructure field-effect transistor ...
What people who are increasingly demanding graphene commercialization avenues often miss is that a good portion of the research into the “wonder material” remains just figuring out what it can do. In the continuing research to ...
Tags: Graphene Films, Wireless Networks, Security
Researchers associated with Taiwan National Central University and Epistar Corp are developing a method to transfer indium gallium nitride (InGaN) light-emitting diodes (LEDs) to ceramic aluminium nitride (AlN) substrates for high-voltage ...
Tags: InGaN LED, Ceramic Substrate
UK-based etch and deposition system maker Oxford Instruments Plasma Technology (OIPT) has appointed Andrew McQuarrie as VP of sales & service in the USA. McQuarrie has more than 28 years of experience in semiconductor and related ...
Tags: OIPT, high-technology businesses
Following its first series of seminars in India (in Bangalore) in 2012, UK-based equipment maker Oxford Instruments has completed its second series of seminars. Focussed on nanotechnology tools and their use in multiple fields, more than ...
Tags: OIPT, Oxford Instruments, Nanotech Seminars
Researchers at Korea's Chonbuk National University and Korea Institute of Science and Technology have improved the contact of graphene with p-type gallium nitride (p-GaN), resulting in improved near-ultraviolet (NUV) light-emitting diodes ...
Tags: Near-ultraviolet LEDs, Graphene GaN MOCVD, Gallium Nitride
Researchers at the National Institute of Advanced Industrial Science and Technology (AIST) in Japan have used evanescent wave coupling to enhance the light output power of red light-emitting diodes (LEDs) by a factor of 3.8 [Guo-Dong Hao ...
Tags: Red LEDs AlGaInP, LED, Electrical, Electronics
Plasma etch, deposition and thermal wafer processing equipment maker SPTS Technologies Ltd of Newport, Wales, UK has won two more awards against other leading companies in Wales and the South West UK. This completes a year in which the firm ...
Tags: SPTS, Electrical, Electronics, Skills Investment
University of California Santa Barbara (UCSB) researchers have been studying the effect of using undoped vertical spacers in the source and drain contacts to reduce off-state leakage in indium arsenide (InAs)-channel ...
Tags: Electrical, Electronics, Mosfets