Efficient Power Conversion Corp (EPC) of El Segundo, CA, USA, which makes enhancement-mode gallium nitride on silicon (eGaN) power field-effect transistors (FETs) for power management applications, says that, to support its accelerating ...
Tags: EPC, GaN, semiconductors
Plextek RF Integration of Great Chesterford, near Cambridge, UK, which designs and develops RFICs, MMICs and microwave/millimeter-wave modules, says that on 3 December at 18:00GMT (10:00PT/13:00ET/19:00CET) its CEO Liam Devlin is presenting ...
Tags: Plextek, GaN Transistors, GaN transistor
Researchers in the USA have reduced current leakage for aluminium gallium nitride (AlGaN) high-electron-mobility transistors (HEMTs) on silicon to the level achieved for devices produced on much more expensive silicon carbide [Bo Song et ...
Tags: AlGaN, transistors, Silicon
After in June launching what it claimed was the lowest-resistance 650V-blocking-voltage transistor (specifying an Rdson as low as 15mOhm), VisIC Technologies Ltd of Rehovot, Israel, a fabless developer of devices based on gallium nitride ...
Tags: VisIC, transistor, semiconductor
Japan's Panasonic Corp has reported the suppression of current collapse up to 800V for a normally-off gallium nitride (GaN) transistor by embedding a hybrid drain in a gate-injection transistor (HD-GIT) structure [Kenichiro Tanaka et al, ...
Tags: Panasonic, GaN transistor, AlGaN
A Kent State University professor in the College of Arts and Sciences has received a grant from the Binational Science Foundation to continue his development of a combined LED and organic transistor that could be used in flexible displays. ...
Tags: Flexible Displays, OLEDs
Research reported in Applied Physics Express (APEX) by Tohru Oka and colleagues at the Research and Development Headquarters for TOYODA GOSEI Co., Ltd in Japan describe the development of ‘vertically orientated’ GaN-based ...
GaN Systems Inc of Ottawa, Ontario, Canada, a fabless developer of gallium nitride (GaN)-based power switching semiconductors for power conversion and control applications, has launched its Half-Bridge Evaluation Board, which demonstrates ...
Tags: GaN Transistor Circuit, power switching semiconductors
Infineon Technologies AG introduced its first devices in a family of Gallium Nitride (GaN) on Silicon Carbide (SiC) RF power transistors at this year's European Microwave Week. As part of Infineon’s industry-leading GaN portfoliothe ...
Wolfspeed of Raleigh, NC, USA, a Cree Company that supplies gallium nitride on silicon carbide (GaN-on-SiC) high-electron-mobility transistors (HEMTs) and monolithic microwave integrated circuits (MMICs), has partnered with security and ...
Tags: Wolfspeed, GaN, Space Fence Program
Wolfspeed of Raleigh, NC, USA, a Cree Company that supplies gallium nitride on silicon carbide (GaN-on-SiC) high-electron-mobility transistors (HEMTs) and monolithic microwave integrated circuits (MMICs), is exhibiting at the MILCOM 2015 ...
Tags: Wolfspeed, GaN-on-SiC, RF Foundry Services
Wolfspeed of Raleigh, NC, USA, a Cree Company that supplies gallium nitride on silicon carbide (GaN-on-SiC) high-electron-mobility transistors (HEMTs) and monolithic microwave integrated circuits (MMICs), has introduced two plastic-packaged ...
Tags: Wolfspeed, high-electron-mobility transistors, GaN HEMT devices
Efficient Power Conversion Corp (EPC) of El Segundo, CA, USA, which makes enhancement-mode gallium nitride on silicon (eGaN) power field-effect transistors (FETs) for power management applications, has published a handbook, 'DC-DC ...
Regions of Origin for Exported Chinese Products in 2014 HS Code Product 2014 Export Sales (USD) YoY Ratio 8517 Electric app for line telephony,incl ...
Tags: alloy steel, hollow drill bars
HS Code Product 2014 Export Sales (Thousand USD) YoY Ratio 8517 Electric app for line telephony,incl curr line system 195,310,005 11.6% ...