A team at IBM Research's Zurich Research Laboratory in Rüschlikon, Switzerland, with support from the firm's T. J. Watson Research Center in Yorktown Heights, New York, has developed what it says is a relatively simple, robust and ...
Tags: IBM III-Vs-on-Si, Electrical, Electronics, IBM
Epitaxial deposition and process equipment maker Veeco Instruments Inc of Plainview, NY, USA says that Xiamen Changelight Co Ltd of Xiamen, China has purchased multiple TurboDisc EPIK 700 gallium nitride (GaN) metal-organic chemical vapor ...
Tags: LED, MOCVD Systems
Researchers based in Japan claim the highest output power and external quantum efficiency (EQE) so far for deep ultraviolet (DUV) sub-270nm-wavelength light-emitting diodes (LEDs) during DC operation [Shin-ichiro Inoue et al, Appl. Phys. ...
Tags: DUV LEDs, DUV devices
Epitaxial deposition and process equipment maker Veeco Instruments Inc of Plainview, NY, USA says that the UK's University of Cambridge has ordered its Propel Power gallium nitride (GaN) metal-organic chemical vapor deposition (MOCVD) ...
Tags: GaN-on-Si, Power Electronics, LEDs
The LED industry is now fully embracing the fast-growing lighting market as (based on revenues) LED lighting has become the largest sector among LED applications, surpassing LCD backlighting in 2014, and is expected to be the major driver ...
Tags: LEDs MOCVD, LED Chip
University of California Santa Barbara (UCSB) has used indium tin oxide (ITO) as part of the cladding for semi-polar indium gallium nitride (InGaN) laser diodes (LDs) [A. Pourhashemi et al, Appl. Phys. Lett., vol106, p111105, 2015]. The ...
Tags: Indium, InGaN substrates, Electrical
X-ray-based in-line metrology and defect detection tool maker Jordan Valley Semiconductors Ltd (JVS) of Migdal Haemek, Israel has received a strategic order for its QC3 high-resolution x-ray diffraction (HR-XRD) system for strain and ...
Researchers at University of Notre Dame (UND) in the USA have claimed record high breakdown voltage for aluminium gallium nitride (AlGaN/GaN) lateral Schottky barrier diodes (SBDs) on silicon [Mingda Zhu et al, IEEE Electron Device Letters, ...
Tags: silicon diodes, GaN substrates
CVD Equipment Corp of Central Islip, NY, USA (a designer and maker of equipment for developing and manufacturing electronic components, materials and coatings for research and industrial applications) is entering into an industrial ...
Tags: CVD Equipment, 2D materials
Zhejiang University in China and University of Cambridge in the UK have jointly developed ultraviolet light-emitting diodes (UV-LEDs) based on metal-semiconductor Schottky junctions between silver nanowires (AgNWs) and gallium nitride (GaN) ...
Deposition equipment maker Aixtron SE of Aachen, Germany says that Taiwanese group Episil Semiconductor Wafer Inc has put into operation an AIX G5 WW (Warm-Wall) chemical vapor deposition (CVD) reactor for silicon carbide (SiC) epitaxy. ...
Tags: silicon components, Electronics
Epitaxial deposition and process equipment maker Veeco Instruments Inc of Plainview, NY, USA has reported revenue for full-year 2014 of $392.9m, up 18% on $331.7m in 2013. Fourth-quarter 2014 revenue was $113.6m, up 22% on $93.3m last ...
Researchers in Korea have used spin-coated silver nanowires (Ag NWs) to improve the performance of indium gallium nitride light-emitting diodes (InGaN LEDs) [Gyu-Jae Jeong et al, Appl. Phys. Lett., vol106, p031118, 2015]. The team based at ...
Tags: Spin-Coating, InGaN LEDs
Luxembourg-registered synthetic diamond materials firm Element Six (a member of the De Beers Family of Companies) says that its Technologies Group experienced more than 20% growth in 2014, marking its third consecutive year of high growth. ...
Tags: synthetic diamond solutions, emerging markets, Electrical
Researchers at Japan's NTT Device Technology Laboratories have used silicon (Si) doping to achieve p-type conduction in gallium arsenide antimony (GaAsSb) produced with metal-organic chemical vapor deposition (MOCVD) on indium phosphide ...