Researchers based in China have found “remarkably reduced efficiency droop” from staircase (SC) thin indium gallium nitride (InGaN) quantum barrier (QB) light-emitting diodes (LEDs) [Kun Zhou et al, Appl. Phys. Lett., vol105, ...
Tags: High Current, remarkably reduced efficiency droop, Electrical
University of California Santa Barbara (UCSB) and Mitsubishi Chemical Corp have reported indium gallium nitride (InGaN) light-emitting diodes (LEDs) with thicker active regions enabled by growing the crystal on the semi-polar (30-3-1) plane ...
BMW is developing LED Street lights equipped with sockets that can be used for charging electric vehicles. The company has reportedly made two prototypes of "Light and Charge" street lights which is designed to combine efficient Light ...
Tags: LED Street lights, infrastructure cost, dedicated power outlets, Auto
Researchers based in Singapore and Turkey have been developing a hole accelerator structure with a view to improving the performance of indium gallium nitride (InGaN) semiconductor light-emitting diodes (LEDs) [Zi-Hui Zhang et al, Appl. ...
Tags: Nitride LEDs, InGaN
North Carolina State University (NCSU) has been developing homo-epitaxy of non-polar aluminium nitride (AlN) with a view to deep ultraviolet (DUV, less than 300nm wavelength) optoelectronics [Isaac Bryan et al, J. Appl. Phys., vol116, ...
Tags: aluminium nitride, UV LED
For the first nine months of 2014 (to end-September), Riber S.A. of Bezons, France, which manufactures molecular beam epitaxy (MBE) systems as well as evaporation sources and effusion cells, has reported a 10% drop in revenue year-on-year ...
The Nobel Prize in Physics for 2014 has been awarded to three scientists for their invention of blue LEDs. Isamu Akasaki, Hiroshi Amano and Shuji Nakamura will share prize money of eight million kronor (0.7 million). In the early ...
Tags: Nobel Prize, LED Invention, Lighting
Epitaxial deposition and process equipment maker Veeco Instruments Inc of Plainview, NY, USA says that, in third-quarter 2014 China’s Suzhou Nanojoin Photonics Co Ltd ordered multiple TurboDisc MaxBright M metal-organic chemical vapor ...
Xi’an Jiaotong University and Shaanxi Supernova Lighting Technology Co., Ltd., of China have used silver nanorods to engineer gallium vacancy defects in gallium nitride (GaN) to create color tunable light emitting diodes [Yaping Huang ...
Tags: GaN, LEDs, LED heterostructure
A tiny ray of blue that revolutionized the lighting industry continues to tantalize investors looking to capitalize on the rise of new technology. On Tuesday, the Nobel Prize was awarded to three scientists for their invention of a blue ...
Tags: blue-light LED, LED
These patents, among other things, protect Cree’s LED component portfolio, including Cree’s white light LEDs. The U.S. Patents included in these cases are: 6,600,175 - Solid state white light emitter and display using same ...
LED chip, lamp and lighting fixture maker Cree Inc of Durham, NC, USA has filed patent infringement lawsuits in the United States District Court for the Western District of Wisconsin to prevent Taiwan-based LED makers Harvatek Corp and ...
Tags: Cree LEDs, Lawsuits, Electronics
Meijo and Nagoya universities in Japan have developed a laser lift-off (LLO) technique for removing gallium nitride (GaN) substrates from ultraviolet (UV) light-emitting diodes (LEDs) to improve light extraction efficiency [Daisuke Iida et ...
The “Xiami Effect” of China is strongly blowing the sails of the Korean smartphone component industry. Component supplies to local smartphone manufacturers in China are surging, especially from Samsung Electro-Mechanics and LG ...
Tags: Xiaomi Effect, Component Industry
University of California, Santa Barbara (UCSB) has used photo-electro-chemical etch (PEC) to create 405nm-wavelength vertical-cavity surface-emitting lasers (VCSELs) based on indium gallium nitride (InGaN) multiple quantum wells (MQWs) [C. ...