For decades, researchers have tried to harness the unique properties of carbon nanotubes (CNTs) to create high-performance electronics that are faster or consume less power — resulting in longer battery life, faster wireless ...
X-Rite, a provider of color science and technology, and its subsidiary Pantone, will demonstrate at Labelexpo Americas 2016, September 13-15, in Rosemont, IL, the latest solutions for specifying, communicating, and reproducing consistent ...
Tags: X-Rite, Labelexpo Americas 2016, color control solutions
EpiGaN nv of Hasselt, near Antwerp, Belgium, which supplies commercial-grade 150mm- and 200mm-diameter gallium nitride on silicon (GaN-on-Si) epitaxial wafers for 600V high-electron-mobility transistor (HEMT) power and RF devices, says that ...
University of Montpellier in France claims the first continuous-wave (cw) operation at room temperature of a 15μm indium arsenide (InAs) quantum cascade laser (QCL) [Alexei N. Baranov et al, Optics Express, vol. 24, p18799, 2016]. "To ...
Tags: University of Montpellier, InAs, MBE
University of California Santa Barbara (UCSB) in the USA has used limited-area epitaxy (LAE) on semi-polar gallium nitride (GaN) substrates to reduce misfit dislocation (MD) densities in multiple quantum well (MQW) green light-emitting ...
Yale University and University of Illinois Urbana in the USA have improved the efficiency of gallium arsenide phosphide (GaAsP) solar cells on silicon (Si) by reducing threading dislocation densities (TDDs) [Kevin Nay Yaung et al, Appl. ...
Tags: GaAsP solar cells, GaAsP, MBE, MOCVD
LED lighting technology firm Flip Chip Opto Inc of Fremont, CA, USA has launched its Ares Series UV-A spectrum flip chip COB (chip-on-board) LED module as part of the firm's standard product line up. The Ares Series is based on patented ...
Tags: Flip Chip Opto Inc, Ares Series UV-A, DBR
Researchers in Germany have been developing an epitaxial lift-off (ELO) process that would allow gallium arsenide (GaAs) substrates to be reused for indium gallium aluminium phosphide (InGaAlP) thin-film light-emitting diode (LED) ...
EpiGaN nv of Hasselt, near Antwerp, Belgium, which supplies commercial-grade 150mm- and 200mm-diameter gallium nitride on silicon (GaN-on-Si) epitaxial wafers for 600V high-electron-mobility transistor (HEMT) power semiconductors, has been ...
Tags: EpiGaN, GaN-on-Si, nomination
For second-quarter 2016, Rubicon Technology Inc of Bensenville, IL, USA (which makes monocrystalline sapphire substrates and products for the LED, semiconductor and optical industries) has reported revenue of $3.5m, down on $4.3m last ...
University of California Santa Barbara (UCSB) in the USA has developed a monolithic white light-emitting diode (LED) with blue light produced by electrical pumping, and green/'red' by optical pumping from the blue source [S. J. Kowsz et al, ...
Researchers based in UK, France, Australia and the USA have developed a chemical epitaxial lift-off (ELO) technique for full 2-inch-diameter gallium nitride (GaN) grown on sapphire and free-standing substrates [Akhil Rajan et al, J. Phys. ...
Tags: GaN, HVPE, free-standing wafers
Sun Chemical has opened a new coatings lab at its research and development facility in Carlstadt, New Jersey, US. The new lab will enable Sun Chemical to provide enhanced services to the graphic arts and packaging markets. Featuring ...
Adflex has purchased FB Servo press from Nilpeter, in a bid to produce quality solutions for the customers. Adflex, which produces pressure sensitive product lables, is expertised in manufacturing high-end label identification and ...
Tags: FB Servo press, UV-platform, APPS
Flexo and offset printing presses producer MPS has sold three presses to Iran based corrugated carton and package printing producer Asan Pack. The Middle East firm has bought two MPS EB 370 presses and one EF 430 flexo press for ...