4 September 2012 Hitachi Cable demo first GaN vertical diode with 3000V breakdown and 1mΩcm2 on-resistance Picture:GaN substrates for power devices.Hitachi Cable Ltd says that it has succeeded in the trial manufacture of what is ...
Tags: Hitachi Cable, GaN, diode
Light source manufacturer Ushio Inc of Tokyo, Japan says that in November it will begin sales of Superline LEDs, a series of LED MR16 halogen replacement lamps from Soraa Inc of Fremont, CA, USA, which develops solid-state lighting ...
Tags: GaN
Ushio to sell Soraa MR16 LED lamp 31 Aug 2012 As of November 1,Ushio will begin selling the Superline LED MR16 lamps based on Soraa's GaN-on-GaN technology through Ushio's subsidiaries in Japan,Taiwan,Korea,Singapore and Germany.Ushio ...
Tags: Ushio, MR16 LED lamp, GaN-on-GaN technology
Triangular quantum well injection boosts nitride LED efficiency by 80% The State Key Laboratory of Optoelectronic Materials and Technology of Sun Yat-sen University has reduced the forward voltages and increased the device efficiency of ...
Tags: LED
Researchers in Switzerland and the USA have reported the first large-signal performance for a gallium nitride on silicon(GaN-on-Si)high-electron-mobility transistors with output power density of 2W/mm and associated peak power-added ...
Tags: GaN/Si, HEMTs, high-electron-mobility transistors, frequency performance
Comtech Telecommunications Corp says that its subsidiary Comtech PST Corp in Melville, NY, USA has been awarded a $3.1m contract for solid-state, high-power RF switches from a major domestic prime contractor. The firm says that the ...
Tags: Switch, Broadband, Telecommunications Transmission, Electronics
Using GaN as a substrate holds promise for many industries,but has immediate applications for light-emitting diodes(LEDs),which Soraa manufactures.A major advancement in a commercially viable new substrate is a promising disruptive ...
Solid State Lighting (SSL) refers to a type of lighting that utilizes light-emitting diodes (LEDs), organic light-emitting diodes (OLED), or polymer light-emitting diodes as sources of illumination rather than electrical filaments or gas. ...
Tags: Solid State Lighting, SSL
AIXTRON SE announced a new MOCVD system order from existing customer Jilin University China. The contract is for one CCS reactor in a 3x2-inch wafer configuration, which will be dedicated to the growth of gallium nitride materials for UV ...
Tags: MOCVD
AIXTRON SE announced a new MOCVD system order from National Central University (NCU) in Taiwan. Existing customer, NCU has placed an order for one 1x6-inch AIXTRON Close Coupled Showerhead MOCVD system, which will be dedicated to the growth ...
Jilin University orders Aixtron reactor for GaN UV and white LED research Deposition equipment maker Aixtron SE of Herzogenrath,Germany says that it has received an order from existing customer Jilin University of Changchun,China for a ...
Tags: Aixtron, MOCVD UV LEDs, White LEDs, GaN, Jilin University
AIXTRON SE today announced a new MOCVD system order from existing customer Jilin University China.The contract is for one CCS reactor in a 3x2-inch wafer configuration,which will be dedicated to the growth of gallium nitride materials for ...
Tags: Europe, China, GaN MOCVD AIXTRON White LED, Jilin University
Internet-based electronic components distributor Digi-Key Corp of Thief River Falls,MN,USA has signed a global distribution agreement with Hittite Microwave Corp of Chelmsford,MA,which supplies MMIC-based solutions for communication and ...
Tags: Digi-Key, Global, electronic
EPC launches WiTricity demo system featuring high-frequency eGaN FETs Efficient Power Conversion Corp (EPC) of El Segundo, CA, USA, which makes enhancement-mode gallium nitride on silicon (eGaN) power field-effect transistors (FETs) ...
Tags: EPC E-mode GaN FETs, Lights, Lighting
Reducing noise at high frequency in nitride-on-silicon transistors France’s Institute of Electronic, Microelectronic and Nanotechnology (IEMN) has produced the first benchmark for low-noise gallium nitride on silicon transistors in ...
Tags: GaN/Si HEMTs MOCVD IEMN, Lights, Lighting, nitride-on-silicon transistors