Gwangju Institute of Science and Technology and Samsung Electronics Co Ltd of South Korea have developed a zinc oxide (ZnO) nanorod (NR) process for improving light extraction from gallium nitride (GaN) light-emitting diodes (LEDs) by up to ...
Tags: GaN, LEDs, Electronics
Ohio State University (OSU) has used polarization engineering to create low-resistance tunnel junctions in gallium nitride (GaN)-based structures [Sriram Krishnamoorthy et al, Appl. Phys. Lett., vol102, p113503, 2013]. Such junctions could ...
Tags: GaN, InGaN, semiconductor
Researchers in South Korea have developed a new gold-doping process for graphene transparent conducting layers (TCLs) that improves its adhesion and electrical contact with near-ultraviolet light-emitting diodes (NUV-LEDs) [Chu-Young Cho et ...
Tags: NUV-LEDs GaN Graphene, Electrical, Electronics, LED
Advanced Micro-Fabrication Equipment Inc. (AMEC) will make its Solid-State Lighting (SSL) market debut with a new multi-reactor Metal Organic Chemical Vapor Deposition (MOCVD) cluster tool. The Prismo D-Blue™ MOCVD platform enables ...
Tags: AMEC, Solid-State Lighting, Lighting Market
A major challenge of in-situ metrology on single-port reactors with small viewport geometries is the combination of curvature measurements (by blue laser) with reflectance measurement at a wavelength of 405nm, says LayTec AG of Berlin, ...
Tags: LayTec, blue laser, reflectance measurement
At the SEMICON China show in Shanghai next week (19-21 March), Shanghai-based dielectric and through-silicon via (TSV) etch tool supplier Advanced Micro-Fabrication Equipment Inc (AMEC) is making its solid-state lighting (SSL) market debut ...
Tags: MOCVD, Electrical, Electronics
LED headlamps are getting better and more cars are getting them as industry finds its feet with the technology. Right now there are some 20 car models on the road with LED headlamps - some all-LED and some with LED low (dip) beams and ...
Tags: LED Headlights, Car Makers, Lighting
Following its proof-of-concept achievement in late 2012, BluGlass Ltd of Silverwater, Australia says that it has produced p-type gallium nitride (GaN) films with industry-equivalent electrical properties using its proprietary ...
Tags: LED device, LED structure, LED
Researchers in Spain have grown high-indium-content indium gallium nitride (InGaN) directly on silicon (Si) substrates [Praveen Kumar et al, Appl. Phys. Express, vol6, p035501, 2013]. The work was carried out at Universidad ...
Tags: InGaN, silicon, Optoelectronics, Microtechnology
Chinese InGaN LED epiwafer and chip maker Jiangxi Lianchuang Optoelectronics Science and Technology Co Ltd (Lianovation) has bought a PE9000C Series purifier from Power+Energy Inc (P+E) of Ivyland, PA, USA, which is engaged in ...
Tags: LED epiwafer, LED chip, LED
Power+Energy Inc (P+E) of Ivyland, PA, USA, which provides palladium-membrane-based hydrogen purifiers for the compound semiconductor and energy industries, says that it recently shipped a PE9000C Series purifier to Jiangxi Lianchuang ...
Every LED maker wants to know the emission wavelength of its final device during metal-organic chemical vapour deposition (MOCVD) growth, says LayTec AG of Berlin, Germany (which makes in-situ metrology systems for thin-film processes, ...
Tags: LED maker, LED, LED structures, lighting
Researchers in China have developed an atomic layer deposition (ALD) technique to create distributed Bragg reflectors (DBR) for increasing nitride semiconductor light-emitting diode (LED) output power by up to 43% [Hongjun Chen et al, Appl. ...
Tags: DBR ALD MOCVD LEDs GaN, Lighting, LED
NTT Basic Research Laboratories in Japan has used hexagonal boron nitride (h-BN) layers to release nitride semiconductor light-emitting diodes (LEDs) from sapphire and transfer them to commercially available adhesive tape [Toshiki Makimoto ...
Tags: LED
Taiwan researchers have used a self-textured oxide mask (STOM) as a template to enhance the external quantum efficiency (EQE) of nitride 380nm ultraviolet (UV) light-emitting diodes (LEDs) by up to 83% [Kun-Ching Shen et al, IEEE Electron ...
Tags: LED light, LED, LED light extraction