5 June 2012 China's Sinoepi orders Aixtron CRIUS II-L system to produce nitride LED wafers Deposition equipment maker Aixtron SE of Herzogenrath,Germany says that in fourth-quarter 2011 it received an order from new customer Sinoepi Co ...
Tags: CRIUS II-L system, LED wafers, MOVCD, Aixtron SE, Sinoepi
4 June 2012 Cree launches X-band fully matched 50-100W GaN HEMTs for commercial radar and satcoms Cree Inc of Durham,NC,USA has launched high-efficiency X-band,fully matched gallium nitride(GaN)high-electron-mobility transistors(HEMTs)for ...
Tags: Cree Inc, GaN HEMTs, high-efficiency X-band, semiconductor, IEEE
4 June 2012 Cascade launches first fully automatic high-power device measurement probe system Cascade Microtech Inc of Beaverton,OR,USA,which provides equipment for the precision contact,electrical measurement and test of ICs,optical ...
Tags: Cascade Microtech Inc.
Veeco Instruments Inc.(Nasdaq:VECO)announced today that it will be presenting at two upcoming conferences: The LED Lighting Evolution Conference:From Sapphire to Lumens,on Wednesday,June 6,2012 in Boston,Massachusetts.The ...
Japanese Nara Institute of Science and Technology has made a breakthrough on integrated optical neural stimulation and observation device incorporating an LED and a CMOS image sensor, which will help researchers in the field of ...
Tags: Market View, led
A little bit of semiconductor magic made a lot of difference to RF power amplifiers,and looks like it will do the same for mains PSUs. That magic is the'two-dimensional electron gas'that forms between layers in certain semiconductor ...
Tags: GaN, semiconductor, RF power amplifiers, GaAs, SiC, PSU, JFET
Kyma's AlN templates are manufactured using its patented plasma vapor deposition of nanocolumns(PVDNC)technology,which provides GaN LED manufacturers with throughput,cost,and performance benefits.Light emitting diode(LED)manufacturers ...
Researchers in China have used a combination of surface texturing and vertical-stand mounting to increase light output from nitride semiconductor LEDs by up to 118.5%[T.B.Wei et al,IEEE Electron Device Letters,published online 7 May ...
Tags: LEDs, VLED, GaN, GaN substrate, MOCVD
24 May 2012 EPC launches eighth brick DC-DC power converter demo board featuring eGaN FETs Efficient Power Conversion Corp (EPC) of El Segundo, CA, USA, which makes enhancement-mode gallium nitride on silicon (eGaN) power field-effect ...
Tags: EPC E-mode GaN FETs, Lights, Lighting
Kyma Technologies Inc of Raleigh,NC,USA,has made a breakthrough on a 10-inch diameter AlN-on-sapphire template using its patented plasma vapor deposition of nanocolumns(PVDNC)technology. The PVDNC AlN templates are chosen by manufacturers ...
Kyma Technologies Inc of Raleigh,NC,USA,which provides crystalline gallium nitride(GaN),aluminium nitride(AlN)and aluminium gallium nitride(AlGaN)materials and related products and services,says that it has demonstrated a 10-inch ...
Tags: 10"AlN-on-sapphire template, GaN, PVDNC, GaN LED
This industry beating result was achieved under the DARPA Compact Mid-Ultraviolet Technology(CMUVT)program and in collaboration with Army Research Laboratories(ARL). This latest development from the world's leading supplier of UV LEDs ...
In the presence of Flemish Minister Ingrid Lieten and Limburg Governor Herman Reynders,EpiGaN nv of Hasselt,Belgium has officially opened its new production site in Research Campus Hasselt(RCH)as the location for volume production of its ...
Efficient Power Conversion Corp(EPC)of El Segundo,CA,USA,which makes enhancement-mode gallium nitride on silicon(eGaN)power field-effect transistors(FETs)used in power management applications,says that Dr David Reusch has joined its ...
Researchers in China based at State Key Laboratory of Optoelectronic Materials and Technologies,Sun Yat-Sen University,have demonstrated a selective area growth(SAG)method for recessing gates in aluminium gallium nitride(AlGaN)semiconductor ...