Researchers in USA and Saudi Arabia have been producing 610nm-wavelength red lasers with III-nitride nanowires (NWs) grown on silicon [Shafat Jahangir et al, Appl. Phys. Lett., vol106, p071108, 2015]. With a view to plastic fiber optical ...
Tags: plastic fiber, Electronics
Researchers based in Japan claim the highest output power and external quantum efficiency (EQE) so far for deep ultraviolet (DUV) sub-270nm-wavelength light-emitting diodes (LEDs) during DC operation [Shin-ichiro Inoue et al, Appl. Phys. ...
Tags: DUV LEDs, DUV devices
Epitaxial deposition and process equipment maker Veeco Instruments Inc of Plainview, NY, USA says that the UK's University of Cambridge has ordered its Propel Power gallium nitride (GaN) metal-organic chemical vapor deposition (MOCVD) ...
Tags: GaN-on-Si, Power Electronics, LEDs
As part of its growth strategy to reach a broader set of customers, Global Power Technologies Group (GPTG) has announced an exclusive global distribution agreement with US-based Digi-Key Electronics, a provider of both prototype/design and ...
Tags: SiC Products, Electronics
PSS (patterned sapphire substrate) maker Rigidtech Microelectronics is setting up a factory in eastern China with initial monthly capacity of 100,000 PSS and volume production there will begin around the end of 2015, according to the ...
GaN-on-GaN technology can be used to grow blue-light laser as a source of lighting with luminous efficiency of 220lm/W, said 2014 Nobel laureate in physics Shuji Nakamura in a speech given inTaipei recently. Nakamura, currently a ...
LED firm Lextar Electronics has reported consolidated revenues of NT$1.178 billion (US$37.4 million) for March, increasing 11.78% sequentially and 4.92% on year, and its January-March consolidated revenues totaled NT$3.502 billion, growing ...
Tags: LED epitaxial wafers, LED chips
University of California Santa Barbara (UCSB) has used indium tin oxide (ITO) as part of the cladding for semi-polar indium gallium nitride (InGaN) laser diodes (LDs) [A. Pourhashemi et al, Appl. Phys. Lett., vol106, p111105, 2015]. The ...
Tags: Indium, InGaN substrates, Electrical
University of California Los Angeles (UCLA) has developed gallium antimonide (GaSb) thermophotovoltaic (TPV) cells on gallium arsenide (GaAs) substrates [Bor-Chau Juang et al, Appl. Phys. Lett., vol106, p111101, 2015]. The use of GaAs ...
Tags: TPV devices, lattice mismatch, Electronics
X-ray-based in-line metrology and defect detection tool maker Jordan Valley Semiconductors Ltd (JVS) of Migdal Haemek, Israel has received a strategic order for its QC3 high-resolution x-ray diffraction (HR-XRD) system for strain and ...
LED epitaxial wafer and chip maker Epistar has developed silicon substrate applications for integrating power drivers on single-chip devices, with volumes of such devices being 75% smaller than those of conventional models, and the company ...
Tags: LED epitaxial wafer, Lights
Patterned sapphire substrate (PSS) maker Rigidtech Microelectronics is seeing strong orders in March and expects continued growth into April, with 4-inch units expected to be at the forefront, according to company president Hung Wen-ching. ...
Tags: Sapphire, LED Chip, epitaxial wafer
The lowest price for an LED light bulb will drop from US$8 in 2014 to US$5 in 2015 and ex-factory prices will slip to US$2-3 in 2015, according to chairman Lee Biing-jye for Taiwan-based LED epitaxial wafer and chip maker Epistar. The ...
Researchers at University of Notre Dame (UND) in the USA have claimed record high breakdown voltage for aluminium gallium nitride (AlGaN/GaN) lateral Schottky barrier diodes (SBDs) on silicon [Mingda Zhu et al, IEEE Electron Device Letters, ...
Tags: silicon diodes, GaN substrates
As PSS (patterned sapphire substrate) makers have been expanding production capacities, PSS supply has significantly increased and therefore Taiwan-based LED epitaxial wafer and chip makers have asked PSS makers to lower quotes for a 4-inch ...