Using a triple-junction III-V compound semiconductor solar cell (in which three photo-absorption layers are stacked together, Japan’s Sharp Corp has surpassed its record for energy conversion efficiency in research-level ...
Tags: Sharp, Triple-junction solar cell
Electronic component distributor Richardson RFPD Inc (an Arrow Electronics Company) of LaFox, IL, USA has introduced a new 0.7-3.8GHz ultra-low-noise amplifier made by Skyworks Solutions Inc of Woburn, MA, USA. The SKY67151-396LF is a ...
Tags: Richardson RFPD, Electronics
Boeing Company subsidiary Spectrolab Inc of Sylmar, CA, USA has introduced 150mm-diameter germanium wafers into production (50mm larger than its prior 100mm wafers). The 50% increase in wafer diameter allows more than 2.5 times more gallium ...
Tags: Spectrolab CPV, wafer diameter
Scientists from the Niels Bohr Institut in Denmark and the Ecole Polytechnique Fédérale de Lausanne (EPFL) in Switzerland have shown that a single core–shell p–i–n junction gallium arsenide (GaAs) nanowire ...
Tags: Solar Cell, GaAs
GaAs-based broadband wireless and wireline communications component maker Anadigics Inc of Warren, NJ, USA says that its AWL9581 front-end integrated circuit (FEIC) is being used in the latest WiFi module of Murata Manufacturing Company Ltd ...
Tags: Murata, Front-End IC, WiFi Module
The launch by the European Space Agency (ESA) of its Proba-V earth observation mini-satellite in the coming weeks will represent the first time that a European-made device based on gallium nitride (GaN) will be sent into space. This follows ...
Tags: Mini-Satellite, GaN
New insight into the state of and prospects for the high-concentrating photovoltaic (HCPV) sector is available in the latest report published by technology market analyst firm Yole Développement. The report presents what the ...
Tags: HCPV Technology, Electrical
At the 14th annual IEEE Wireless and Microwave Technology Conference (WAMICON 2013) in Orlando, FL (7-9 April), RF front-end component maker and foundry services provider TriQuint Semiconductor Inc of Hillsboro, OR, USA launched three ...
Sol Voltaics AB of Ideon Science Park, Lund, Sweden has unveiled SolInk, a nanomaterial that promises to boost the efficiency of crystalline silicon or thin-film solar modules by up to 25%, leading to solar power plants and rooftop solar ...
Tags: crystalline silicon, solar modules
OPEL Technologies Inc of Toronto, Ontario, Canada – which develops III-V semiconductor devices and processes through US affiliate OPEL Defense Integrated Systems (ODIS Inc) of Storrs, CT – says that Dr Adam Chowaniec and Dr ...
Tags: OPEL, Directors, OPEL Technologies
Nitronex LLC of Durham, NC, USA, which designs and makes gallium nitride (GaN)-based RF power transistors for the defense, communications, broadband, and industrial & scientific markets, has named David W. Runton as its new VP of ...
In a recent blog in mid-March, Eric Higham of market research firm Strategy Analytics noted that gallium arsenide device revenue closed 2012 at a new record of just over $5.3bn, albeit up by just under 2% on 2011. The small gain was driven ...
Tags: GaAs device, Semiconductors
Rubicon has been granted its "Asymmetrical Wafer Configurations and Method for Creating the Same,” U.S. Patent No. 8,389,099 by the United States Patent and Trademark Office (USPTO). The patent covers the creation of visual and ...
Tags: LED, Patent, LED manufacturers
Researchers at Purdue and Harvard universities have developed gallium arsenide (GaAs) enhancement-mode (E-mode) surface/n-channel metal-oxide-semiconductor field-effect transistors (NMOSFETs) with a maximum drain current of 336mA/mm, which ...
Tags: NMOSFETs, GaAs, GaAs transistor ALE
GaAs-based broadband wireless and wireline communications component maker Anadigics Inc of Warren, NJ, USA says that president & CEO Ron Michels has been appointed chairman of the board of directors. In conjunction, the firm has also ...
Tags: Anadigics, Electrical, Electronics