Transphorm Inc of Goleta, near Santa Barbara, CA, USA (which designs and delivers power conversion devices and modules) has launched the Total GaN family of gallium nitride on silicon transistors and diodes, establishing what is claimed to ...
Tags: Transphorm, power devices, GaN device
Soraa announced yesterday the next generation of its high external quantum efficiency GaN on GaN LEDs. As described in Appl. Phys. Lett. 101, 223509, Soraa’s new LED outperforms the best-documented LED laboratory result by Nichia ...
Tags: Soraa, LED outperforms, GaN LEDs, LED laboratory
Researchers in China and Canada have developed air-bridge field plates for nitride semiconductor high-electron-mobility transistors (HEMTs) that increase the breakdown voltage and offer more stable performance at raised temperatures [Xie ...
Transphorm Inc of Goleta, near Santa Barbara, CA, USA (which designs and delivers power conversion devices and modules) says that its novel 600V gallium nitride (GaN) module has enabled the first GaN-based high power converter. Transphorm ...
Richardson RFPD Inc (an Arrow Electronics Company) of LaFox, IL, USA has launched its Avionics & Radar Tech Hub, a micro-website featuring the latest news, innovations and new products related to avionics and radar applications. The ...
Tags: avionics applications, radar applications, GaN transistors
Efficient Power Conversion Corp (EPC) of El Segundo, CA, USA, which makes enhancement-mode gallium nitride on silicon (eGaN) power field-effect transistors (FETs) used in power management applications, will be presenting an educational ...
Tags: EPC, eGaN Technology, APEC
Richardson RFPD Inc (an Arrow Electronics Company) of LaFox, IL, USA has launched a new website resource focused exclusively on gallium nitride (GaN). Several Richardson RFPD suppliers are driving innovation in the development of GaN ...
Tags: Richardson RFPD, Gallium Nitride, Microsemi
Soraa has developed the next generation of its high external quantum efficiency GaN on GaN LEDs, which outperform the best-documented LED laboratory result by Nichia Chemical Co. at current densities of 100 A/cm2 and beyond as described in ...
Tags: Soraa, GaN on GaN LEDs, LED laboratory
Soraa has received an award from the U.S. Department of Energy for its outstanding work in the development of high-efficiency m-plane LEDs grown on low-defect density bulk GaN substrates. The company demonstrated a very high peak internal ...
As described in Applied Physics Letters 101, 223509, Soraa’s new LED outperforms the best-documented LED laboratory result by Nichia Chemical Co. at current densities of 100 A/cm2 and beyond (J. Phys. D: Appl. Phys. 43, 354002). ...
Soraa Inc of Fremont, CA, USA, which develops solid-state lighting technology built on ‘GaN on GaN’ (gallium nitride on gallium nitride) substrates, has announced the next generation of its high external quantum efficiency ...
Tags: Soraa GaN-on-GaN, LED, USA
Soraa Inc of Fremont, CA, USA, which develops solid-state lighting technology built on ‘GaN on GaN’ (gallium nitride on gallium nitride) substrates, has received an award from the US Department of Energy for its work in the ...
Tags: Soraa GaN-on-GaN, Electronics, Lighting
The Optogan group of companies is a vertically integrated producer of High Brightness LEDs based in St. Petersburg, Russian Federation. The group is also active in Finland and Germany. Founded in 2004 by 3 graduates of Ioffe ...
Tags: Optogan, Lighting Brands, led, led chip, hb led
Seoul Semiconductor claims 5x brightness with non-polar LEDs 10 Jul 2012 Seoul Semiconductor has announced that it will introduce LEDs based on non-polar technology,which it claims will deliver over 5x the lumens per unit area of ...
Electrical test instrument and system provider Keithley Instruments Inc of Cleveland, OH, USA has introduced seven instrumentation, software, and test fixture configurations for parametric curve tracing applications for characterizing high ...