LED utilization rates are picking up again, with utilization in Taiwan now back up to 70 to 90 percent of capacity. Companies expect to be back to close to 100 percent in a month or two, driven by TV backlight demand, reports Yole ...
Wide-bandgap semiconductor materials such as gallium nitride (GaN) offer far higher performance than traditional silicon but cost significantly more. However, by 2020 GaN costs will drop enough for it to become competitive based on ...
Tags: Bulk GaN, traditional silicon, gallium nitride, reckons market
With the LED TV backlight market slowing, and the general lighting market yet to take off, LED makers are looking to all sorts of innovative ways to improve cost and performance to drive adoption — from disruptive new technologies to ...
Tags: LED Market, LED lighting
18 October 2012 Lithium aluminate substrate for low-cost nonpolar gallium nitride Researchers based in Germany and the Netherlands have been studying the potential for growing nonpolar gallium nitride(GaN)on lithium ...
Sony's diode lasers claim 2012 Leibinger prize 17 Sep 2012 Mass production of laser diodes and backwards compatible optical data storage recognized with biennial Zukunftspreis. Osamu Kumagai, a senior VP at Sony, has won the 2012 ...
Tags: Sony, Osamu Kumagai, Red Emitters, Blu-ray Disc
Kyma's GaN crystal growth system is based on the hydride vapor phase epitaxy(HVPE)growth process which is a proven high growth rate approach for producing high purity crystalline compound semiconductor materials including GaN,GaAs,InP,and ...
Tags: Metallurgy, Crystal, Materials
Kyma Technologies has tapped into the market for GaN crystal growth equipment. The firm's GaN crystal growth system is based on the hydride vapour phase epitaxy(HVPE)growth process which is a proven high growth rate approach for producing ...
Tags: Kyma Technologies, GaN, crystal growth equipment, HVPE
Kyma Technologies Inc of Raleigh,NC,USA,which provides crystalline gallium nitride(GaN),aluminum nitride(AlN)and aluminum gallium nitride(AlGaN)materials and related products and services,is to enter the GaN crystal growth equipment ...
4 September 2012 Hitachi Cable demo first GaN vertical diode with 3000V breakdown and 1mΩcm2 on-resistance Picture:GaN substrates for power devices.Hitachi Cable Ltd says that it has succeeded in the trial manufacture of what is ...
Tags: Hitachi Cable, GaN, diode
Using GaN as a substrate holds promise for many industries,but has immediate applications for light-emitting diodes(LEDs),which Soraa manufactures.A major advancement in a commercially viable new substrate is a promising disruptive ...
Soraa, dedicated in developing GaN solid-state lighting technology, has been selected by Advanced Research Projects Agency-Energy (ARPA-E) to lead a project on bulk GaN substrates development. It’s the only ARPA-E funded LED substrate ...
Tags: North America Soraa GaN Substrate DOE, Lights, Lighting
Soraa Inc of Fremont, CA, USA, which develops solid-state lighting technology built on 'GaN on GaN' (gallium nitride on gallium nitride) substrates, has been selected by the US Department of Energy's (DOE) Advanced Research Projects ...
Tags: GaN substrates
Soraa will lead DOE funded research on GaN LED substrates 08 Aug 2012 The DOE's transformational-energy agency ARPA-E has selected GaN-on-GaN startup Soraa to lead a project on the development of bulk GaN substrates. Startup Soraa emerged ...
Tags: Soraa, DOE, GaN, GaN-on-GaN, LED, LED Substrates, ARPA-E
Despite many uncertainties in the LED industry in second-half 2012, South Korea-based LED firm Seoul Semiconductor and upstream LED chip subsidiary Seoul Optodevice Company (SOC) have been optimistic about third-quarter 2012 performances. ...
Tags: LED lighting, LED TV
China's Xiamen Powerway Advanced Material Co Ltd (PAM-Xiamen), which supplies ultra-high purity crystalline gallium nitride (GaN) and aluminium gallium nitride (AlGaN) materials and other related products and services, has announced the ...
Tags: Free-standing, SI, carbide