SI articles & resources on Made-in-China.com

Plessey Orders Aixtron AIX G5+ C MOCVD System for GaN-on-Si Monolithic Micro-LEDs

Sep 21, 2018

Deposition equipment maker Aixtron SE of Herzogenrath, near Aachen, Germany has received an order for an AIX G5+ C Planetary Reactor metal-organic chemical vapor deposition (MOCVD) system from UK-based Plessey Semiconductors to boost its ...

Tags: micro-LED, LED

RF Power Amplifier Market to Grow From $3bn by 3.2X, at 12.2% CAGR, Through 2028

Sep 17, 2018

The approximately $3bn RF power amplifier market is poised to expand at a robust compound annual growth rate (CAGR) of 12.2% over 2018-2028, as the widening expansion of 5G cellular networks will remain the main driver of RF power amplifier ...

Tags: Power electronics

Plessey and JDC Collaborate on Tailored Backplane for Monolithic Micro-LED Displays

Sep 17, 2018

Plessey Semiconductors Ltd of Plymouth, UK has announced a strategic partnership for its own monolithic micro-LED displays – manufactured on its proprietary gallium nitride on silicon (GaN-on-Si) wafers – to be driven by the ...

Tags: Micro-LED Displays

EpiGan Showcasing GaN Epiwafer Solutions for 5G

Aug 31, 2018

In booth J2554 of its local agent APEC at the SEMICON Taiwan show in Taipei (5-7 September) and in booth 354 at European Microwave Week (EuMW 2018) in Madrid, Spain (23-28 September), EpiGaN nv of Hasselt, near Antwerp, Belgium - which ...

Tags: GaN Epiwafer, epitaxial wafer

Panasonic Develops Insulated-Gate MIS GaN Power Transistor Capable of Continuous Stable Operation

Feb 24, 2018

Panasonic Corp of Osaka, Japan has developed an insulated-gate metal-insulator-semiconductor (MIS) gallium nitride (GaN) power transistor capable of continuous stable operation with no variation in its threshold gate voltage. This makes it ...

Tags: Panasonic, Power Transistor

Plessey Demos Microled-Based AR and VR Hud Concept at CES

Jan 19, 2018

Plessey Semiconductors Ltd of Plymouth, UK has demonstrated how its monolithic microLED technology can be used to deliver the next-generation of head-up displays (HUDs), enabling new augmented reality (AR) and virtual reality (VR) ...

Tags: microLED, displays

China PV Module Makers Strive to Break Barriers to Shingled Array Technology

Dec 26, 2017

China-based PV module makers are making R&D efforts trying to break barriers of patents concerning shingled array modules owned by Europe- and US-based firms, according to industry sources. Shingled array technology is to equally divide ...

Tags: PV module, shingled array module

Macom's RF Energy Toolkit Now Available for Commercial OEMs Designing GaN-on-Si-Based RF Systems

Oct 11, 2017

M/A-COM Technology Solutions Inc of Lowell, MA, USA (which makes semiconductors, components and subassemblies for analog RF, microwave, millimeter-wave and photonic applications) says that its RF Energy Toolkits are now available for order, ...

Tags: RF Systems, Macom

Laytec Ships in-Situ Metrology System to GaN-on-SiC Customer

Oct 10, 2017

In-situ metrology system maker LayTec AG of Berlin, Germany recently shipped a comprehensive EpiCurve TT/Pyro 400 in-situ metrology hybrid system to an industrial customer in North America. The metrology station combines automated in-situ ...

Tags: MOCVD, GaN-on-SiC

HP Launches New Solutions for Digital Printing and Embellishment of Labels

Sep 28, 2017

HP has unveiled new portfolio of solutions for digital printing and embellishment of labels at this year’s Labelexpo event in Belgium. The event is being held between 25 and 28 September in Brussels. The new solutions can be used ...

Tags: Digital Printing, HP

CSEM, NREL and EPFL Raise Silicon-Based Multi-Junction Solar Cell Efficiency Record

Aug 30, 2017

The US Department of Energy’s National Renewable Energy Laboratory (NREL), the Swiss Center for Electronics and Microtechnology CSEM (Centre Suisse d'Electronique et de Microtechnique) and EPFL (école Polytechnique ...

Tags: Solar Cell, Microtechnology

Wolfspeed Extends 50V GaN Hemt Family to High-Efficiency 3.0GHz 250W

Aug 28, 2017

Wolfspeed of Raleigh, NC, USA — a Cree Company that makes silicon carbide (SiC) power products and GaN-on-SiC high-electron-mobility transistors (HEMTs) and monolithic microwave integrated circuits (MMICs) — has extended its ...

Tags: Wolfspeed, silicon carbide

Qorvo Launches Dual-Transistor GaN-on-Sic Asymmetric Doherty Amplifier Module for Macro Base-Stations

Aug 14, 2017

Qorvo Inc of Greensboro, NC, USA (which provides core technologies and RF solutions for mobile, infrastructure and defense applications) has launched an asymmetric Doherty amplifier enabling ultra-high levels of power efficiency in the ...

Tags: Qorvo, GaN, RF, GaN-on-SiC

Allos Challenges Conventional Beliefs of GaN-on-Si

Aug 2, 2017

In the presentation ‘Low vertical leakage current of 0.07μm/mm2 at 600V without intentional doping for 7μm-thick GaN-on-Si’ at the 12th International Conference on Nitride Semiconductors (ICNS-12) in Strasbourg, France ...

Tags: technology engineering, epiwafer

Monolithic Electrically Injected Microdisk Lasers on Silicon

Aug 1, 2017

Researchers in Russia claim “the first demonstration of an injection quantum well microdisk laser fabricated of III-V materials monolithically grown on silicon (001) substrate” [N. V. Kryzhanovskaya et al, Optics Express, vol. ...

Tags: silicon photonics, Lasers

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