At the 11th China International Forum on Solid State Lighting (SSL CHINA 2014) in Guangzhou (6-8 November), deposition equipment maker Aixtron SE of Aachen, Germany has launched its next-generation metal-organic chemical vapor deposition ...
Researchers based in Singapore and Turkey have been developing a hole accelerator structure with a view to improving the performance of indium gallium nitride (InGaN) semiconductor light-emitting diodes (LEDs) [Zi-Hui Zhang et al, Appl. ...
Tags: Nitride LEDs, InGaN
For its fiscal second-quarter 2015 (to 27 September 2014), RF Micro Devices Inc of Greensboro, NC, USA has reported record revenue of $362.7m, up 14.7% on $316.3m last quarter and 16.7% on $310.7m a year ago. Fiscal Q2/2014 Q3/2014 ...
Tags: RFMD, RF Micro Devices
For third-quarter 2014, RF front-end component maker and foundry services provider TriQuint Semiconductor Inc of Hillsboro, OR, USA has reported record revenue of $272.1m, up 18% on $230.8m last quarter and up 8% on $250.8m a year ago. This ...
Japan’s National Institute of Advanced Industrial Science and Technology (NAIST) has claimed the highest breakdown voltage to date for a diamond metal-semiconductor field-effect transistor (MESFET) [Hitoshi Umezawa et al, IEEE ...
Advantech Wireless of Montreal, Canada (which manufactures satellite, RF equipment and microwave systems) has increased its production capacity of gallium nitride (GaN)-based solid-state power amplifiers (SSPAs) and block up-converters ...
Tags: Advantech Wireless, Electronics
The market for gallium nitride (GaN) packaged LEDs in automotive applications will reach $1bn this year for the first time, rising by 11% from $943m in 2013 to $1.05bn in 2014, forecasts the LED Intelligence Service of IHS Technology in a ...
Tags: Automotive LED lighting, GaN LEDs
The market for GaN packaged LEDs in automotive applications is forecast to reach the US$1 billion mark in 2014 for the first time, according to IHS. Industry revenues are projected to grow 11% from US$943 million in 2013 to US$1.05 ...
Efficient Power Conversion Corp (EPC) of El Segundo, CA, USA, which makes enhancement-mode gallium nitride on silicon (eGaN) power field-effect transistors (FETs) for power management applications, has introduced the EPC9118, a fully ...
Tags: Buck Converter, Demo Board
The US Patent Office has issued US Patent No. 8,859,310 to Versatilis LLC of Winooski, VT, USA (a technology and business development firm that focuses on novel materials and processes for electro-optical devices, as well as extending its ...
Tags: US Patent, Semiconductor
The next-generation power semiconductor market will increase at a compound annual growth rate (CAGR) of 63% between 2011 and 2017 to more than $500m, forecasts market research firm The Information Network in its report 'Next-Generation ...
Tags: Power Semiconductor, Electronics
Soraa Inc of Fremont, CA, USA, which develops solid-state lighting technology built on ‘GaN on GaN’ (gallium nitride on gallium nitride) substrates, has launched a complete line of MR16 LED lamps powered by its third-generation ...
Tags: Soraa GaN-on-GaN, MR16 Lamps
Efficient Power Conversion Corp (EPC) of El Segundo, CA, USA, which makes enhancement-mode gallium nitride on silicon (eGaN) power field-effect transistors (FETs) for power management applications, has announced the publication of the ...
Xi’an Jiaotong University and Shaanxi Supernova Lighting Technology Co., Ltd., of China have used silver nanorods to engineer gallium vacancy defects in gallium nitride (GaN) to create color tunable light emitting diodes [Yaping Huang ...
Tags: GaN, LEDs, LED heterostructure
Currently, most flexible electronic and optoelectronic devices are fabricated using organic materials. However, for these devices inorganic compound semiconductors such as gallium nitride (GaN) can provide advantages over organic materials ...
Tags: LEDs, LED displays, Electrical, Electronics