Taiwanese LED chip manufacturer Epistar delivered a stellar performance during the traditional LED low season. The company announced its Dec. 2013 revenue reached NT$ 2.04 billion (US$ 70 million) marking a historical high for the last 10 ...
Chinese LED chip manufacturers are conservative towards expansion, according to the Commercial Times. Forepi and Genesis Photonics Inc. (GPI) have temporarily stopped introducing new MOCVD units for 2014 and are aiming to increase ...
Tags: LED chip
Researchers in China have developed a selective area epitaxy (SAE) approach to create nanopyramids of nitride semiconductor 'white' light-emitting diodes (LEDs) without using phosphors [Kui Wu et al, Appl. Phys. Lett., vol103, p241107, ...
Tags: Electrical, Electronics, LED
Researchers based in Korea and Egypt have used wafer thinning to increase the efficiency of nitride semiconductor green light-emitting diodes (LEDs) [Wael Z. Tawfik et al, Appl. Phys. Express, vol6, p122103, 2013]. The contributing ...
Researchers at University of California Santa Barbara (UCSB) have used low-temperature metal-organic chemical vapor deposition (MOCVD) of p-type gallium nitride (GaN) to achieve intentional surface roughening of a solar cell device, thereby ...
Tags: Ingan Solar Cell, MOCVD
Guoqing Tang, China President of LED BU, Samsung, who is also Chairman of SEMI China LED Committee, gives an in depth analysis of the LED industry developments and categorization in this article. Chinese baby boomers born in the 1950s ...
Tags: LED Industry, Lighting
University of California Santa Barbara (UCSB) has been using limited area epitaxy (LAE) to improve the performance of lasers diodes (LDs) grown on free-standing semipolar (20-21) gallium nitride (GaN) substrates [Matthew T. Hardy et al, J. ...
University of California Santa Barbara (UCSB) and Fuji Electric Corp of America have been developing indium gallium nitride (InGaN) solar cell structures in efforts to extend the conversion efficiency of multi-junction photovoltaic (PV) ...
Tags: Nitride Barriers, Electrical
University of California Santa Barbara (UCSB) has developed semipolar (20-2-1) nitride semiconductor laser diodes (LDs) without using aluminium gallium nitride (AlGaN) as the cladding material for optical confinement [A. Pourhashemi et al, ...
Australian Cleantech company BluGlass Limited has today announced that it has increased its operational capacity with the successful commissioning of a former production MOCVD system at the Company’s Silverwater facility. Using a low ...
Tags: Bluegalss, MOCVD System
Taiwanese LED chip manufacturer Epistar saw earnings turn to losses in 3Q13, due to loss on valuation of financial liability. Although, the company’s gross profit rebound rate was much lower than expected in 2013, higher gross profits ...
Chinese Academy of Sciences' Semiconductor Lighting R&D Center at the Institute of Semiconductors in Beijing has developed an electrically driven color-tunable light-emitting diode (LED) based on indium gallium nitride (InGaN) quantum wells ...
Tags: LED, Electrical, Electronics, Semiconductor
LG Electronics Materials and Components Laboratory in South Korea has used aluminium gallium nitride (AlGaN) superlattice structures (SLs) to improve lateral current spreading from the n-side of nitride semiconductor light-emitting diodes ...
Tags: Nitride LEDs, Light
Researchers in Taiwan have used nanopyramid nitride semiconductor structures to explore long-wavelength green, olivine and amber light-emitting diode (LED) structures [Shih-Pang Chang, Optics Express, Vol. 21, p23030, 2013]. The team was ...
Tags: Nitride LEDs, Electronics
Taiwan’s National Cheng Kung University has developed near-green light-emitting diodes (LEDs) using a new indium gallium nitride (InGaN) growth process that gives devices with a higher peak external quantum efficiency of 48.6% ...
Tags: LEDs, Near-green LEDs, InGaN MOCVD