Yale University and University of Illinois Urbana in the USA have improved the efficiency of gallium arsenide phosphide (GaAsP) solar cells on silicon (Si) by reducing threading dislocation densities (TDDs) [Kevin Nay Yaung et al, Appl. ...
Tags: GaAsP solar cells, GaAsP, MBE, MOCVD
For second-quarter 2016, epitaxial deposition and process equipment maker Veeco Instruments Inc of Plainview, NY, USA has reported revenue of $75.3m, down 8.6% on $78m last quarter and 42.7% on $131.4m a year ago, consistent with ...
Tags: Veeco, LED industry
Researchers at the University of Illinois at Urbana Champaign (UIUC) say that they have developed a new method for making brighter and more efficient green LEDs (R. Liu and C. Bayram, 'Maximizing cubic phase gallium nitride surface coverage ...
Tags: Green LEDs, MOCVD
Riber S.A. of Bezons, France, which manufactures molecular beam epitaxy (MBE) systems as well as evaporation sources and effusion cells, has received an order for a Compact 21T MBE research system for delivery in 2016 to a laboratory in ...
Riber S.A. of Bezons, France, which manufactures molecular beam epitaxy (MBE) systems as well as evaporation sources and effusion cells, has reported a 23% rise in revenue from €5.7m in first-half 2015 to €7m in first-half 2016, ...
Tags: Riber MBE, molecular beam epitaxy
Researchers at University of California Santa Barbara (UCSB) and Rutgers University in the USA believe that charge polarization in III-nitride materials has not been adequately understood up to now [Cyrus E. Dreyer et al, Phys. Rev. X vol6, ...
Tags: semiconductors, Electronics
Researchers in Hong Kong and USA have been working on producing optically pumped micro-disk lasers on exact (001) silicon [Yating Wan et al, Appl. Phys. Lett., vol108, p221101, 2016]. The team from Hong Kong University of Science and ...
Researchers at Hong Kong University of Science and Technology (HKUST) are proposing using III-nitride and silicon carbide (SiC) hybrid technologies for high-voltage power devices [Jin Wei et al, IEEE Transactions on Electron Devices, vol63, ...
Epitaxial deposition and process equipment maker Veeco Instruments Inc of Plainview, NY, USA has received the first order from a Chinese customer for its GENxplor R&D molecular beam epitaxy (MBE) system. Nanjing University is scheduled to ...
For full-year 2015, Riber S.A. of Bezons, France, which manufactures molecular beam epitaxy (MBE) systems as well as evaporation sources and effusion cells, has reported revenue of €12.8m, down 23% on 2014's €16.6m. This is due ...
Epiwafer foundry and substrate maker IQE plc of Cardiff, Wales, UK says that during March it received record volume purchase orders worth just over $3m (to be delivered over the next 12 months) for its indium antimonide (InSb) and gallium ...
Tags: IQE
Researchers in Hong Kong and USA have developed indium arsenide (InAs) quantum dot (QD) microdisk lasers directly integrated on silicon (Si) with performance comparable to the best reported for similar devices on gallium arsenide (GaAs) ...
Tags: InAs quantum dot microdisk lasers InAs GaAs substrates
Researchers in France claim the first demonstration of 10GHz large-signal microwave power performance for flexible aluminium gallium nitride (AlGaN) barrier high-electron-mobility transistors (HEMTs) [S. Mhedhbi et al, IEEE Electron Device ...
Barnes & Noble has announced a new partnership with renowned pastry chef-to-the-stars, Mich Turner, to feature her specially designed spring cookie at stores nationwide. Launching today, the beautifully decorated cookie is available in ...
Tags: Barnes&Noble, Mich Turner, Spring cookie
Rearchers in China claim the first radio frequency (RF) switch device based on indium gallium arsenide (InGaAs)-channel metal-oxide-semiconductor field-effect transistor (MOSFET) technology [Zhou Jiahui et al, J. Semicond. 2016, vol37, ...
Tags: InGaAs MOSFET RF switch