The universities of Virginia and of Texas in the USA have been developing avalanche photodiodes (APDs) based on aluminium indium arsenide antimonide (AlInAsSb) alloys. Two papers from the group detail the implementation of a staircase ...
Researchers in the UK have claimed the first demonstration of laser diodes grown directly on silicon that perform up to 75°C and 120°C under continuous wave (cw) and pulsed operation, respectively [Siming Chen et al, Nature ...
Tags: Quantum dot lasers, GaAs, Silicon substrate, MBE
After unveiling its third generation of in-situ metrology tools last October, in-situ metrology system maker LayTec AG of Berlin, Germany says that the EpiTT Gen3 is now available as the first representative of this Gen3 product class. ...
Tags: UV LED epitaxy, sapphire
University of California Santa Barbara (UCSB) in the USA has been developing a hybrid technique to create III-nitride tunnel junctions (TJs) using a combination of metal-organic chemical vapor deposition (MOCVD) and molecular beam epitaxy ...
Tags: Gallium Nitride Tunnel, Hybrid
Yellow laser diodes with low thesholds have been produced by Jijun Feng (University of Shanghai for Science and Technology, China) and Ryoichi Akimoto (National Institute of Advanced Industrial Science and Technology (AIST), Japan) based on ...
Tags: Yellow lasers BeZnCdSe 560-590nm lasers, Ryoichi Akimoto, Electronics
University of Cyprus, Cyprus University of Technology, and University of Crete have been exploring the potential of Frster resonant energy transfer (FRET) from an indium gallium nitride (InGaN) single quantum well (SQW) to a light-emitting ...
Tags: InGaN, InGaN quantum well, FRET
Riber S.A. of Bezons, France, which manufactures molecular beam epitaxy (MBE) systems as well as evaporation sources and effusion cells, has received two orders for research MBE machines. The Fraunhofer HHI (Heinrich Hertz Institute) in ...
Researchers in the USA have reduced current leakage for aluminium gallium nitride (AlGaN) high-electron-mobility transistors (HEMTs) on silicon to the level achieved for devices produced on much more expensive silicon carbide [Bo Song et ...
Tags: AlGaN, transistors, Silicon
Jijun Feng and Ryoichi Akimoto based in China and Japan have developed low-threshold green and green-yellow laser diodes (LDs) based on a beryllium zinc cadmium selenide (BeZnCdSe) quantum well [Appl. Phys. Lett., vol107, p161101, 2015]. ...
Tags: laser diodes, zirconium dioxide
For third-quarter 2015, epitaxial deposition and process equipment maker Veeco Instruments Inc of Plainview, NY, USA has reported revenue of $140.7m, up 51% on $93.3m a year ago although up only 7% on $131.4m last quarter (which was the ...
Tags: LED market, LCD TVs
Researchers in the USA have been working on gallium nitride phosphide (GaNP) as an absorbing material for solar power [S. Sukrittanon et al, Appl. Phys. Lett., vol107, p153901, 2015]. The aim of the team from University of California San ...
British motion furniture manufacturer accentu8 is expanding with two new appointments. The Welsh rise and recline furniture manufacturer, which appointed Angela Gidden MBE as its consultant creative director in 2013, has taken on Lee ...
Tags: motion furniture, sofas, armchairs, high back chairs
Veeco Instruments announced today that Asahi Kasei Microdevices (AKM), a leading electronics company headquartered in Tokyo, Japan, has purchased a GEN200® Molecular Beam Epitaxy System and S UMO® Effusion Cells for production of ...
Tags: Veeco, Asahi Kasei, MBE, IR sensor production
Applied Optoelectronics Inc (AOI) of Sugar Land, near Houston, TX, USA, a manufacturer of fiber-optic access network products (including components, modules and equipment) has announced a new optical engine for use in 100Gbps transceivers ...
Tags: Optical Engine, fiber-optic
University of California Santa Barbara (UCSB) has developed an n-type gallium nitride (n-GaN) tunnel junction (TJ) intracavity contact to reduce threshold current and increase differential efficiency in its m-plane III-nitride ...
Tags: VCSEL, n-GaN, GaN substrates, MOCVD, MBE