Cree, Inc. announces the release of its second generation SiC MOSFET, enabling systems to have higher efficiency and smaller size at cost parity with silicon-based solutions. These new 1200V MOSFETs deliver power density and switching ...
Tags: Cree, Volume Production, power applications
Linear Technology has revealed its solution to the thorny problem of active cell balancing in electric and hybrid vehicle batteries. Implemented in the newly-released LTC3300, the topology uses one fly-back transformer per cell and allows ...
Structured Materials Industries Inc (SMI) of Piscataway, NJ, USA, which provides chemical vapor deposition (CVD) systems, components, materials, and process development services, has been awarded a $150,000 Small Business Innovation ...
Tags: SMI MOCVD, construction material, Zinc oxide, Electrical, Electronics
ISSCC 2013 - 60th Anniversary Held every year in February in San Francisco, the IEEE's International Solid State Circuits Conference (ISSCC) is the world showcase for innovative circuit design. This is the 60th conference, and year's ...
Tags: Circuits Conference, capacitors, inductors
Dublin-based fab-less chip company Ikon Semiconductor has jumped into the competitive LED light bulb market with its first product: a dimmable single-stage ac-dc converter. Like iWatt's new chip for non-dimmable bulbs (see page??), Ikon ...
Tags: fab-less chip company, Ikon Semiconductor, LED light bulb market
iWatt has taken a step into the non-dimmable power factor corrected LED bulb market with its first ac-dc product to feature an npn power switch. "This is new for us: non-dimmable plus PFC. Dimmable bill-of-materials is around $2. This is ...
Tags: iWatt, LED bulb, LED lighting
Microchip has introduced a digitally-controlled analogue DC-DC converter chip for power converters between 50 and 150W, including high current point-of-load converters. Called MCP19111, both microprocessor and analogue blocks are on the ...
Researchers in Taiwan and USA have developed lateral insulated-gate bipolar junction transistors (IGBTs) using 4H silicon carbide (SiC) technology [Kuan-Wei Chu et al, IEEE Electron Device Letters, published online 9 January 2013]. ...
Tags: insulated gate bipolar transistors, silicon carbide, Electron Device
Renesas Electronics has introduced low on-state resistance mosfets which are optimised for use as ORing FETs in power supplies. The on-state resistance is 0.72mΩ (typical value) for 30V. This is about 50% lower resistance ...
The market for semiconductors used in power supplies is forecast to grow by 6.5% in 2013, following a largely flat market for power supplies in 2012, says market analyst IMS Research. Strongest growth is predicted for MPU/MCU/DSP/DSC ...
Researchers from GLOBALFOUNDRIES, SEMATECH, and Massachusetts Institute of Technology (MIT) have extended their indium arsenide quantum well metal-oxide-semiconductor field-effect transistor (InAs QW MOSFET) technology to some of the ...
Power semiconductor device maker International Rectifier Corp (IR) of El Segundo, CA, USA has announced that co-founder Eric Lidow passed away on 18 January. Born in Vilnius, Lithuania (then part of Russia) over 100 years ago in 1912, ...
Tags: Power semiconductor device, Eric Lidow, Electrical, Electronics Engineers
Microsemi has introduced silicon carbide (SiC) standard power modules with industrial temperature grade. Designed for use in high power switch mode power supplies, motor drives, uninterruptible power supplies, solar inverters and oil ...
Tags: Microsemi, silicon carbide, power modules
Swiss IGBT driver manufacturer CT-Concept is to open custom design centre in Ense, Germany. It will develop semi-custom gate-drive designs based on its driver cores, and produce full-custom drivers using the firm's Scale-2 chipset for ...
Tags: IGBT driver, driver cores, chipset
Researchers at Massachusetts Institute of Technology (MIT) have presented the shortest-gate working transistors yet built using III-V channels [J. Lin et al, IEDM, session 32.1]. The metal-oxide-semiconductor field-effect transistors ...
Tags: transistors, MIT, metal oxide semiconductor