Toshiba has added to its small-signal,medium-power Schottky barrier diodes(SBDs)and MOSFETs that are suitable for wireless power transfer applications. The range of devices covers single and dual n-and p-channel MOSFETs as well as ...
Fairchild Semiconductor,an innovator of MOSFET technology,continues to deliver the latest LED lamp drivers following the addition of an optimized low-power offering to its extensive LED lighting driver solutions product line. Along with ...
Power electronics device market to reach $20bn this year The total market for semiconductor devices (discretes, modules and ICs) dedicated to the power electronics industry will reach $20bn in 2012, according to the report 'Status of the ...
Tags: raw material, GaN SiC
Mitsubishi Electric to sample SiC power modules for more compact,efficient electronic equipment Tokyo-based Mitsubishi Electric Corp says that,at the end of July,it will begin shipping samples of five kinds of silicon carbide(SiC)-based ...
Tags: Mitsubishi Electric, SiC power modules, electronic equipment
Hong Kong University of Science and Technology has achieved record maximum drain currents and peak transconductances for enhancement-mode(normally off)metal–oxide–(nitride)semiconductor heterojunction field-effect ...
The high growth rate of 2010 was sustained in the first half of 2011, but demand started to tail off in the second quarter The power semiconductor discrete and module market reported a growth by a more modest 9% to just under $18bn in ...
Tags: semiconductor, power semiconductor, module, Euro crisis, solar energy
Power semi market grows 9%to$18bn in 2011 despite challenges Following a spectacular recovery in 2010,the power semiconductor discrete and module market grew by a more modest 9%in 2011 to just under$18bn,according to the 15th edition of ...
Tags: semiconductor, power modules, manufacturers
Guest writer Bruce Haug,senior product marketing engineer at Linear Technology describes how a chipset can simplify the design of high-performance forward converters,making them an easy to build and compelling alternative to prefabricated ...
Tags: Power, High-Performance, Chipset
Massachusetts Institute of Technology (MIT) researchers have found that a post-etch anneal dramatically improves the performance of their self-aligned indium gallium arsenide (InGaAs) quantum-well metal–oxide–semiconductor ...
A little bit of semiconductor magic made a lot of difference to RF power amplifiers,and looks like it will do the same for mains PSUs. That magic is the'two-dimensional electron gas'that forms between layers in certain semiconductor ...
Tags: GaN, semiconductor, RF power amplifiers, GaAs, SiC, PSU, JFET
Tokyo-based Mitsubishi Electric Corp has developed a prototype forced-air-cooled three-phase 400V output inverter with all-silicon carbide(SiC)power modules that has a power density of 50kVA per liter.The module,which is rated at ...
Tags: Mitsubishi Electric, all-SiC inverter, Tokyo, electric resistance
SemiSouth Laboratories Inc of Starkville, MS, USA (which designs and manufactures silicon carbide device for high-power, high-efficiency, harsh-environment power management and conversion applications) has launched a 1700V/1400m ...
Tags: SemiSouth, power supplies, USA
''Gallium nitride power transistors are poised to move out of the labs and into mains PSUs and motor drives,'' was one message from the PCIM power show in Nuremberg this month. ''Only if the price drops and designers can bear the ...
Tags: Gan, Silicon, transistors
Toshiba has announced at the PCIM exhibition in Germany a new generation of superjunction(SJ)technology for power mosfets.The new DTMOS-IV process,which is being deployed in the company's latest family of high-speed,high-efficiency 600V ...
In Hall 12,booth 404 at the PCIM Europe 2012 trade show in Nuremberg,Germany(8-10 May),power semiconductor manufacturer Infineon Technologies has launched its new CoolSiC 1200V silicon carbide(SiC)JFET family which,the firm says,takes ...
Tags: Infineon, SiC JFETs, Solar inverters, CoolSiC technology