Cree Inc of Durham, NC, USA has released what it claims is the first all-SiC (silicon carbide) 1.7kV power module in an industry-standard 62mm housing. Powered by Cree's C2M large-area SiC chip technology, the new half-bridge module ...
An interdisciplinary team at the US Naval Research Laboratory (NRL) has received the Japan Society of Applied Physics’ 2014 Outstanding Paper Award. The award is only given to a select group of papers that present excellent ...
Tags: NRL, Award, Electronics
Cree is to participate in the 11th annual Darnell Power Forum (DPF 2014) in Richmond, VI (23-25 September). As part of Darnell’s Energy Summit 2014 (a solutions-oriented conference and exhibition event that also hosts the Green ...
Tags: Cree, Darnell Power Forum, Electronics
Raytheon UK's semiconductor business unit in Glenrothes, Scotland, UK has embarked on a Knowledge Transfer Partnership (KTP) project, in conjunction with researchers at Newcastle University, to enhance the performance of silicon carbide ...
Deposition equipment maker Aixtron SE of Aachen, Germany has teamed up with research institution Fraunhofer IISB (Institute for Integrated Systems and Device Technology) in Erlangen, Germany, to develop 150mm silicon carbide (SiC) epitaxy ...
Tags: Aixtron CVD SiC, Electrical, Electronics
Epiluvac AB of Lund, Sweden says that it is now offering silicon carbide (SiC) chemical vapor deposition (CVD) epitaxy reactors in various configurations. As one of the most interesting semiconductor materials in electrical power ...
Cree Inc of Durham, NC, USA says that its C2M, 1200V, 80mΩ silicon carbide (SiC) MOSFETs have been selected by Japan's Sanix Inc, to be designed into their new 9.9kW three-phase solar inverters for use in the construction of ...
Tags: Cree SiC MOSFET, Solar Inverters, Solar, Electrical, Electronics
Researchers in Singapore have reported high-frequency performance of gallium nitride (GaN) indium aluminium nitride (InAlN) high-electron-mobility transistors (HEMTs) on silicon substrates, including the first noise measurements [S. ...
Tags: Electrical, Electronics
M/A-COM Technology Solutions Inc of Lowell, MA, USA (which makes analog semiconductors, components and subassemblies for analog, RF, microwave and millimeter-wave applications) has launched a gallium nitride on silicon carbide (GaN-on-SiC) ...
Tags: M/A-COM, Transistor, Electrical
UK full-service energy-efficiency specialist SaveMoneyCutCarbon.com has announced a new partnership as Master Distributor for Soraa Inc of Fremont, CA, USA and its GaN-on-GaN (gallium nitride on gallium nitride) technology, which provides ...
Tags: Soraa, Distributor, Electrical
RF front-end component maker TriQuint Semiconductor Inc of Hillsboro, OR, USA says that it is the first gallium nitride (GaN) RF chip maker to achieve Manufacturing Readiness Level (MRL) 9, meaning that its GaN manufacturing processes have ...
Tags: TriQuint, GaN, front-end component
Google and the Institute of Electrical and Electronic Engineers’ Power Electronics Society (IEEE PELS) have launched the Little Box Challenge, an open competition with a $1m prize to create a much smaller but higher-power-density ...
Tags: inverters, GaN SiC, Power Inverter
Tokyo-based Mitsubishi Electric Corp has launched a transfer-molded super-mini dual in-line package power factor correction (DIPPFC) module incorporating silicon carbide (SiC) transistors and diodes that is expected to help reduce the power ...
RF front-end component maker and foundry services provider TriQuint Semiconductor Inc of Hillsboro, OR, USA has reached a defense production milestone, completing the Defense Production Act Title III Gallium Nitride on Silicon Carbide (GaN ...
Tags: TriQuint, GaN, RF, GaN-on-SiC
Agnitron Technology Inc of Eden Prairie, MN, USA is scheduled to ship its latest 1500°C+ reactor upgrade for the Veeco metal-organic chemical vapor deposition (MOCVD) D-series Legacy System platform. The single 2”- or ...
Tags: Veeco MOCVD, Reactor