At European Microwave Week (EuMW 2015) in Paris, France (8–10 September), M/A-COM Technology Solutions Inc of Lowell, MA, USA (which makes semiconductors, components and subassemblies for analog RF, microwave, millimeter-wave and ...
Researchers in Japan have been developing ways to increase minority carrier lifetimes in lightly doped silicon carbide (SiC) with a view to insulated-gate bipolar transistors (IGBTs) [Tetsuya Miyazawa et al, J. Appl. Phys., vol118, p085702, ...
The gallium nitride (GaN) substrate market will grow from $2.2bn in 2014 to more than $4bn by 2020, forecasts research and consulting firm IndustryARC in the report 'Gallium Nitride (GaN) Substrates Market Analysis: By Type (GaN on ...
Tags: Diameters, GaN Substrate Market
The US Air Force has awarded Cree Inc of Durham, NC, USA, which makes silicon carbide (SiC) and gallium nitride (GaN) wafers and devices as well as LEDs, a $4.1m follow-on contract, enabling qualification of a high-performance power ...
Tags: GaN wafers, SiC
Qorvo Inc, a provider of core technologies and RF solutions for mobile, infrastructure and aerospace/defense applications, says that it has scaled its proprietary QGaN25 gallium nitride (GaN) on silicon carbide (SiC) process to produce ...
New York State governor Andrew Cuomo has announced that GE Global Research Center of Niskayuna, NY, USA will expand its New York global operations to the Mohawk Valley, serving as the anchor tenant of the Computer Chip Commercialization ...
Tags: SiC Power Electronics, packaging
For full-year fiscal 2015 (ended 28 June), Cree Inc of Durham, NC, USA has reported revenue of $1.63bn, down just 1% on fiscal 2014's record $1.65bn. Specifically, revenue for Lighting Products (mainly LED lighting systems and bulbs) grew ...
Tags: LED Product, LED chips
According to the report 'GaN and SiC for power electronics applications' from Yole Développement, in 2014 the silicon carbide (SiC) chip business was worth more than $133m, with power factor correction (PFC) and photovoltaics (PV) ...
Tags: SiC Market, power electronics
Researchers in the USA have developed vertical Schottky and pn gallium nitride (GaN) diodes on silicon with performance comparable to devices grown on much more expensive substrates [Yuhao Zhang et al, IEEE Transactions On Electron Devices, ...
Tags: electronics, semiconductor
II-VI Inc of Saxonburg, PA, USA says that the Advanced Materials Division of its Performance Products Segment in Pine Brook, NJ, which supplies single-crystal silicon carbide (SiC) substrates and CVD-grown polycrystalline diamond materials, ...
Tags: electronics, semiconductor, II-VI, SiC substrates, SiC Wafer
Tokyo-Mitsubishi Electric Corp has completed installation of, and begun testing, railcar traction converter/inverter systems with all-silicon carbide (SiC) power modules on N700 Shinkansen bullet trains for Central Japan Railway Company ...
Tags: Mitsubishi Electric, SIC power modules, Tokyo-Mitsubishi Electric Corp
With funding of about €3.9m from the German Federal Ministry of Education and Research (BMBF), 12 partners in the German automotive sector, its supply industry and the sciences (led by Infineon Technologies AG of Munich, Germany) are ...
Tokyo-based Mitsubishi Electric Corp says that its traction inverters incorporating all-silicon carbide (SiC) power modules, installed in a 1000 Series urban commuter train operated by Japan's Odakyu Electric Railway Co Ltd, have been ...
Tags: Mitsubishi, Electric's Railcar
Princeton Power Systems of Princeton, NJ, USA - which designs and manufactures products for energy management, micro-grid operations and electric vehicle charging - has demonstrated for the first time a grid-tied bi-directional power ...
Tags: SiC JFETs, Power Converter
Richard Eden, senior analyst (Power Semiconductors) at market research firm IHS Technology, attended the recent PCIM (Power Conversion Intelligent Motion) Europe 2015 tradeshow in Nuremberg, Germany (19-21 May), and in a Research Note has ...
Tags: GaN SiC, Power electronics