Cree, Inc. announces its latest silicon carbide (SiC) offering with low basal plane dislocation (LBPD) 100-mm 4H SiC epitaxial wafers. This LBPD material exhibits a total BPD density of < 1 cm-2 in the epitaxial drift layer, with BPDs ...
Tags: Wafer
But executive chairman Jerry Rawls thinks that communications firms will have to begin adding to their network capacities before long. Datacom versus telecom:Finisar's last eight quarters Finisar,the top-ranked supplier of optical ...
Cree continues to lead the SiC materials marketplace in driving to larger diameters and this latest advancement lowers device cost and enables adoption for customers with existing 150-mm diameter device processing lines. 150-mm epitaxial ...
Tags: Wafer
4 September 2012 Hitachi Cable demo first GaN vertical diode with 3000V breakdown and 1mΩcm2 on-resistance Picture:GaN substrates for power devices.Hitachi Cable Ltd says that it has succeeded in the trial manufacture of what is ...
Tags: Hitachi Cable, GaN, diode
Cree Inc of Durham,NC,USA has introduced low basal plane dislocation(LBPD)100-mm 4H silicon carbide(SiC)epitaxial wafers.This LBPD material exhibits a total BPD density of 1 cm-2 in the epitaxial drift layer,with BPDs capable of causing Vf ...
Dongguan Tianyu Semiconductor Technology Co Ltd,which claims to be the first manufacturer of silicon carbide(SiC)epitaxial wafers in China,has started to expand its SiC epiwafer business globally after the completion of three contracts in ...
Cree Inc of Durham, NC, USA has announced the availability of high-quality, low-micropipe 150mm 4H n-type silicon carbide (SiC) epitaxial wafers, with highly uniform epitaxial layers as thick as 100 microns available for immediate purchase ...
Tags: SiC wafer
Deposition equipment maker Aixtron SE of Herzogenrath,Germany says that Showa Denko of Chichibu,Japan has added a SiC CVD Warm-Wall Planetary Reactor system to its Aixtron equipment base,capable of handling either ten 100mm or six 150mm ...
Tags: Aixtron, Showa Denko, CVD system, deposition equipment maker
Reducing noise at high frequency in nitride-on-silicon transistors France’s Institute of Electronic, Microelectronic and Nanotechnology (IEMN) has produced the first benchmark for low-noise gallium nitride on silicon transistors in ...
Tags: GaN/Si HEMTs MOCVD IEMN, Lights, Lighting, nitride-on-silicon transistors
Soraa Inc of Fremont, CA, USA, which develops solid-state lighting technology built on 'GaN on GaN' (gallium nitride on gallium nitride) substrates, has been selected by the US Department of Energy's (DOE) Advanced Research Projects ...
Tags: GaN substrates
Less than a year after showcasing the 152 lumens-per-watt concept LED bulb, Cree Inc of Durham, NC, USA has unveiled a 170 lumens-per-watt (LPW) prototype LED light bulb. The firm says that the 170LPW LED bulb enables much higher efficacy ...
UK-based Plessey Semiconductors Ltd has taken delivery of a CRIUS II-XL metal-organic chemical vapor deposition (MOCVD) reactor (in 7x6-inch wafer configuration) from deposition equipment maker Aixtron SE of Herzogenrath, Germany (which ...
Tags: MOCVD
Latest issue of Semiconductor Today now available For coverage of all the key business and technology developments in compound semiconductors and advanced silicon materials and devices over the last month,subscribe to Semiconductor ...
Tags: Issue, Semiconductor, Lights
The power discrete and module market will grow by almost$9bn to$26.2bn in 2016,forecasts the 15th edition of an annual report from IMS Research,which this year includes more comparisons of wide-bandgap(silicon carbide and gallium ...
Tags: GaN, SiC, IMS Research, silicon, semiconductor
Friedrich-Alexander University Erlangen-Nuremberg,Germany,and ACREO AB,Sweden,have developed a transistor technology combining graphene with silicon carbide(SiC)[S.Hertel et al,Nature Communications,published 17 July 2012]. Graphene is a ...
Tags: transistor, Graphene, Electrical